NTR0202PLT1

NTR0202PLT1 is a P-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that utilizes current control of conducting channel as function switch. It is a single N-channel MOSFET packaged in a small outline JEDEC SOT-23 package, characterized by low drain-to-source resistance and high input impedance for signal amplification.

Applications:

• Load switches
• General switching applications
• Low voltage DC to DC converters
• Battery management systems
• Power management in consumer electronics
• Power supplies

Working Principle:

NTR0202PLT1 MOSFET functions with two operation modes. In the enhancement mode, the channel is basically off and no current flows until the voltage on the gate terminal is increased enough to create an “inversion” layer in the p-type channel.

Source and drain voltages are applied to NTR0202PLT1 MOSFET in both on/off modes. The current flow is proportional to the voltage applied to the gate. As the gate voltage increases above the threshold voltage, the MOSFET begins to conduct and the drain-to-source resistance is decreased exponentially.

The second operation mode, or the depletion mode, is characterized by the already existing intersection layer. A negative gate-to-source voltage will decrease current through the MOSFET. NTR0202PLT1 MOSFETs can be used as switching devices or for signal amplification purposes in analog circuits.

NTR0202PLT1 offers low on-state resistance, which makes it a suitable device for applications that demand low loss in on-state. Additionally, since it has a very low gate charge, it is advantageous for applications requiring low power consumption, such as battery management systems.