Allicdata Part #: | NTR0202PLT3G-ND |
Manufacturer Part#: |
NTR0202PLT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 400MA SOT-23 |
More Detail: | P-Channel 20V 400mA (Ta) 225mW (Ta) Surface Mount ... |
DataSheet: | NTR0202PLT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 225mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 70pF @ 5V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 2.18nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 200mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 400mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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NTR0202PLT3G is a single N-channel field-effect transistor (FET), which is specially designed for low voltage applications and is optimized for use as loadswitches,inrush limiters and unidirectionalcurrent limiters in notebook systems and other portable devices. This device has a maximum breakdown voltage at 55 volts and a low RDS(on) at 0.017 ohms.The main application fields of NTR0202PLT3G can be divided into two categories. Firstly, it is commonly used as load switch in notebook systems, such as Graphics Card and Hard Drive. In these applications, the NTR0202PLT3G works as a switch to enable the components by controlling the voltage and current between the power supply and the load. This allows for efficient operation with minimal power consumption.The second application for NTR0202PLT3G is as an Inrush Limiter or Unidirectional Current Limiter in portable devices such as battery-powered products. In this application, the FET is used to substantially decrease the inrush current when the device is initially powered on. This limits the peak surge in current, protecting the related components from any potential damage.In order to understand the working principle of NTR0202PLT3G, it is important to first understand how a field-effect transistor (FET) works. A FET works by controlling a current flow through an external gate voltage. The gate voltage affects the drain-source voltage, known as VDS. It can be described as a controlled current source that acts as a switch, either allowing current flow, which is known as saturation, or blocking it completely, which is known as the cutoff region.When NTR0202PLT3G is used as a load switch in notebook systems, the current will flow when the VGS (gate-to-source voltage) is above the threshold voltage (Vth). The threshold voltage is usually around 2-4 volts. When the VGS is below the threshold voltage, the current will not flow, thereby acting as an open switch. When used as an Inrush Limiter or Unidirectional Current Limiter in portable devices, the FET will be designed so that the current is only allowed to flow in one direction, blocking any back current from passing through.The NTR0202PLT3G also has some other advantages that make it a very attractive option for many applications. It has an ultra-low RDS(on) of 0.017 ohms, which makes it very efficient in terms of power consumption and heat dissipation. Additionally, its on-resistance is forward and very stable over the temperature range of -55°C to 125°C. This makes it suitable for a wide variety of applications that require a reliable, low-power FET.Overall, NTR0202PLT3G is an ideal single N-channel FET for low voltage applications such as load switches, inrush limiters and unidirectional current limiters. It has a maximum breakdown voltage of 55 volts, a low RDS(on) of 0.017 ohms, and a wide temperature range of -55°C to 125°C. It is also suitable for a variety of applications due to its ultra-low power consumption and stable on-resistance characteristics.The specific data is subject to PDF, and the above content is for reference
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