Allicdata Part #: | NTTS2P02R2OS-ND |
Manufacturer Part#: |
NTTS2P02R2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 2.4A 8MICRO |
More Detail: | P-Channel 20V 2.4A (Ta) 780mW (Ta) Surface Mount M... |
DataSheet: | NTTS2P02R2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: | Micro8™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 780mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 16V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 2.4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTTS2P02R2 is a P-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed to be used in applications requiring high current, low on-resistance, and low gate threshold voltage. It is a single-type device, meaning it has only one terminal instead of two or more.
MOSFETs such as the NTTS2P02R2 have several advantages over traditional transistors such as bipolar junction transistors. MOSFETs are generally easier to manufacture, consume less power, and can handle higher power levels. Furthermore, their low gate threshold voltage (Vth) allows them to be switched on faster than other devices, making them more suitable for high-speed applications.
The NTTS2P02R2 has a Vth of -2.2V, a drain current of 11A, and an on-resistance of 9.4mΩ. It also has a very low gate charge of 6.7nC, which reduces the power needed to switch it on and off. This makes it ideal for applications where low switching times and low quiescent power consumption are both important factors.
The NTTS2P02R2 has a number of applications. It is used as a power switch in mobile phones, tablets, and laptop computers, where it is used to control the main power supply and battery power. In automotive applications, it is used as a DC-DC converter, and in solar inverters. It is also used in audio amplifiers, and in power supplies for high-definition television sets.
The working principle of the NTTS2P02R2 is based on the operation of the Metal Oxide Semiconductor. When a positive voltage is applied to the gate terminal, the gate voltage will induce a potential barrier between the source and drain terminals, blocking the flow of current. When a negative voltage is applied, this potential barrier will be reversed, allowing current to flow from one terminal to the other. This is the principle behind the switching action of the device.
In addition to its electrical characteristics, the NTTS2P02R2 is built using a variety of manufacturing processes, including etching and injection molding of plastics. The device is tested both in the factory and in the field to ensure it will meet specifications and perform reliably in service.
In conclusion, the NTTS2P02R2 is a single-level P-Channel MOSFET that offers high current, low on-resistance, and low gate threshold voltage. It has many applications, including mobile phones, tablets, automotive electronics, and audio amplifiers. Its operation is based on the working principle of the Metal Oxide Semiconductor, and it is built using a variety of manufacturing processes. The NTTS2P02R2 is an excellent choice for applications requiring fast switching, low power consumption, and reliable performance.
The specific data is subject to PDF, and the above content is for reference
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