NTTS2P03R2G

NTTS2P03R2G Application Field and Working Principle

NTTS2P03R2G is an N-channel enhancement mode Field Effect Transistor (FET) from ON Semiconductor. It belongs to a special family called Single Power FETs. Specifically, this product is a low ON-state resistance (RDS ON ) and high dv/dt rated gate bipolar transistor (G-FET).

Application Field

These N-channel power FETs are available with impedances ranging from 500 Ω to 10 and with maximum operational voltages of 600 V, 1200 V, and 1700 V. Since they have a very low ON-state resistance and excellent dv/dt ratings, these FETs are ideal for high-current applications such as DC-DC converters, power supplies, and motor control circuits. They are also suitable for low-voltage applications thanks to their low gate charge. Additionally, these FETs can be used in RF amplifiers and switching applications, where low-noise switching is required.

Working Principle

These power FETs are based on an enhancement-mode operation, meaning that they are turned on by a moderate voltage applied to the gate. This voltage must be higher than the threshold voltage of the FET’s channel in order to create a conducting channel between the source and drain. Since applying a voltage between the gate and the source creates an electric field that attracts free electrons, thus causing them to flow between the source and the drain, these FETs can be used as switches.

Once the channel is created, the FETs can be switched on and off by controlling the gate voltage. When the indicated voltage is below the threshold, the electric field is weakened, thus preventing the electrons from moving. When the gate voltage is increased above the threshold value, the electric field strengthens, thus allowing the electrons to flow.

With a high-speed switching, these FETs will also provide a low-noise performance as well as a low gate charge, making them ideal for RF switching applications. Additionally, the low RDS ON of these FETs ensures a high linearity, making them suitable for switching power supplies and high-current applications.

Conclusion

The ON Semiconductor NTTS2P03R2G FETs are ideal for high-current applications such as DC-DC converters, power supplies and motor control circuits, low-voltage applications, as well as high-noise switching applications. Moreover, their low ON-state resistance and excellent dv/dt ratings make them suitable for RF switching applications.