Allicdata Part #: | NTY100N10-ND |
Manufacturer Part#: |
NTY100N10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 123A TO-264 |
More Detail: | N-Channel 100V 123A (Tc) 313W (Tc) Through Hole TO... |
DataSheet: | NTY100N10 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 313W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10110pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 350nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 123A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Many electronic devices require control of a large current or voltage by means of a much smaller input. To accommodate this type of application, Field Effect Transistors (FETs) have been developed. They are particularly well suited to switching applications since they can often handle high voltages and currents while operating with a low control voltage.
The NTY100N10 is a single-slot, single-gate, N-type MOSFET. It is designed for use in high-current, high-voltage switching applications. This particular type of FET is suited for use in applications where the total voltage potential across the drain and source can exceed 200 V. It features excellent thermal performance, reasonable switching time, and good avalanche characteristics.
The basic operating principle of an FET can be compared to that of a variable resistor. An electrical field is created by the gate voltage, and this field interacts with the electrons in the semiconductor material (in this case, an N-type silicon substrate). If the input voltage applied to the gate exceeds a certain threshold, it causes a number of electrons to be forced to exist in the area between the source and the drain, forming a conductive path through the silicon.
The current flow between the source and drain is then regulatedby the amount of voltage applied to the gate. This state of current flow is referred to as saturation, when the gate voltage is sufficient to maintain a state of high current flow between the source and drain. By varying the gate voltage, the current flow can be varied.
In the case of the NTY100N10, the saturation point is normally about Vgs=4V, and the drain current can reach up to 10A. This makes it an ideal choice for applications such as motor speed control, light dimming, and switching power supplies. It is capable of operating at high frequencies and its low on-resistance allows for minimum power losses. In addition, the FET has a wide range of terminal configurations and can be easily incorporated into standard surface-mount packages.
In conclusion, the NTY100N10 is a single-slot, single-gate, N-type MOSFET. It is designed for use in high-current, high-voltage switching applications, and is capable of handling voltages up to 200 V with excellent thermal performance and switching times, as well as good avalanche characteristics. Its wide range of applications, including motor speed control and light dimming, make it an excellent choice for many types of switching applications.
The specific data is subject to PDF, and the above content is for reference
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