| Allicdata Part #: | NTY100N10G-ND |
| Manufacturer Part#: |
NTY100N10G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 123A TO-264 |
| More Detail: | N-Channel 100V 123A (Tc) 313W (Tc) Through Hole TO... |
| DataSheet: |  NTY100N10G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-264-3, TO-264AA |
| Supplier Device Package: | TO-264 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 313W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 10110pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 350nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 10 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 123A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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NT100N10G is an enhancement type N-Channel MOSFET transistor that offers excellent performance, with a wide range of applications.
It is commonly used in various power management, audio and video circuits and is highly recommended for use in linear, low noise and medium power applications.
The NT100N10G is designed with a MOS Structure which gives it a low on-resistance. This low on-resistance enables high current flow, and ensures low power consumption for extended battery life.
The structure of the NT100N10G includes a gate, a drain and a source. The gate contains an input signal, the drain an output signal, and the source a connection to a voltage supply or ground. When the gate is charged, it will allow the flow of current from the drain to the source which will then turn it on.
Once the gate is charged, the current will continue to flow unless it is stopped or the gate voltage is dropped. When the voltage is dropped, the drain will be discharged, causing the transistor to turn off. This is referred to as the "off" state.
The NT100N10G has a number of applications that include power control, noise reduction, over-voltage protection and audio/video switching. It is also used in automotive circuits and power supplies. Due to its low on-resistance and minimum voltage drop characteristics it is suitable for use in high-speed switching applications. It is also suitable for handheld, mobile and battery-powered applications.
The NT100N10G has an operating voltage range of 0.25V to 10V with a power rating of 8W, a drain-source breakdown voltage rating of 100V and a gate-source reverse leakage of 0.1µA. It has a drain-source on-state resistance of 30mΩ and a maximum operating junction temperature of +300°C.
In summary, the NT100N10G is an N-Channel MOSFET transistor designed with a low on-resistance and excellent performance. It has a wide range of applications including power control, noise reduction, over-voltage protection and audio/video switching. The operating voltage range, power rating and maximum operating junction temperature make the NT100N10G an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| NTY100N10 | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 123A TO-... |
| NTY100N10G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 123A TO-... |
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