NVA4001NT1G Discrete Semiconductor Products

The NVA4001NT1G is a single-channel MOSFET designed to operate in environments with varying voltage and temperature needs. This combines high performance with moderate-to-high power density and features a low on-resistance. Its logic-level gate and radiation-hardened dielectric allow for greater flexibility and cut-through of high-speed signals. This makes the NVA4001NT1G an ideal choice for today’s advanced systems and applications.

The NVA4001NT1G is a suitable component for high-frequency, high-efficiency pulse-power applications, such as DC-DC power conversion. It is often used in power management in cell phones, tablets, and other portable devices. The low on-resistance and low R_dson make the NVA4001NT1G a powerful current-switching component, allowing it to regulate and control the power in these applications.

In addition to its power management applications, the NVA4001NT1G is also suitable for high-performance analog circuits. Its high-speed switching characteristics allow it to be used in high-frequency and high-speed applications, such as RF and broadband video and audio systems. The NVA4001NT1G can also be used as an amplifier or oscillator in analog circuits.

The NVA4001NT1G is a long-lifetime component with a drain-source voltage of -60V, a gate source voltage of -20V, and a drain current of up to 4.5A. It has a maximum power dissipation of 2W and an operating temperature range of -55℃ to 150℃. The NVA4001NT1G is also a superior component for power converters and regulators, providing low on-state resistance, high-speed switching, and other features for maximum performance.

The NVA4001NT1G works with a bulk 5.5V V_GS on-resistance of 20mΩ, a maximum on-resistance of 25mΩ, and a gate threshold voltage of just -0.6V. Its gate capacitance is relatively low, ranging from 1.3pF to 1.7pF. With its low gate capacitance, the NVA4001NT1G is capable of high-speed switching and is suitable for high performance circuitry.

The working principle of the NVA4001NT1G is based on the operation of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). MOSFETs are voltage-controlled devices that use an oxide layer to control the current between the source and drain. The NVA4001NT1G features a logic-level gate, meaning it can be controlled with a low-voltage signal.

When a voltage is applied to the gate, the oxide layer pushes electrons from the gate to the channel, creating an electrical current that flows from the source to the drain. The resistance between the source and the drain can be adjusted by increasing or decreasing the voltage on the gate. This allows the NVA4001NT1G to control power flow in applications such as power management, RF and broadband audio, and high-performance analog systems.

The NVA4001NT1G is a powerful component that can be used in a variety of high-performance applications. Its superior on-resistance and low gate capacitance makes it perfect for high-frequency, high-efficiency pulse-power applications. It can also be used in power management and high-performance analog circuits. With its low voltage, high-speed switching capabilities, the NVA4001NT1G is ideal for today’s complex systems.