NVA4153NT1G

Vgs(th) (Max) @ Id:	1.1V @ 250µA
Package / Case:	SC-75, SOT-416
Supplier Device Package:	SC-75, SOT-416
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	300mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	110pF @ 16V
Vgs (Max):	±6V
Gate Charge (Qg) (Max) @ Vgs:	1.82nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	230 mOhm @ 600mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	915mA (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NVA4153NT1G Application Field and Working PrincipleThe NVA4153NT1G is an advanced MOSFET transistor that is designed to offer superior performance in a wide range of applications. The device utilizes advanced silicon technology to achieve very high switching frequencies, low on-state resistance, and improved thermal characteristics. The NVA4153NT1G can be used to switch high power signals and current in smart phones, laptops, and other consumer electronic devices. In addition, its high-current capabilities make it suitable for automotive and industrial applications.The NVA4153NT1G is a single MOSFET that has an insulation gate construction. The gate is insulated from the source and drain, so it can be used to control the flow of current without the need for an external driver circuit. The device has a high-speed turn-on and turn-off time, which makes it suitable for a variety of fast switching applications.When the gate voltage of the NVA4153NT1G is zero, the transistor is in an "off" state and there is no current flowing between the source and drain. When the gate voltage is applied, the transistor is in an "on" state and current can flow between the source and drain. As the gate voltage increases, the on-state resistance decreases, allowing more current to flow. This makes the NVA4153NT1G ideal for high-current applications such as motor control and power supplies, where it can switch large amounts of current quickly and efficiently.The NVA4153NT1G also features a low drain-source resistance, which makes it suitable for high power applications. The device is designed to operate at a maximum drain-source voltage of 250V and a maximum drain current of 11A. Its low on-state resistance, high switching speed, and low drain-source resistance make it an ideal choice for high-power, high-speed applications.The NVA4153NT1G is available in a variety of packages including a TO-220, a TO-252, and a SOT-223 package. The NVA4153NT1G is RoHS compliant and capable of operating at junction temperatures up to +175°C.In summation, the NVA4153NT1G is an advanced MOSFET transistor designed to offer superior performance in a wide range of applications. It features low on-state resistance, high-speed turn-on and turn-off times, and is capable of operating at a maximum drain-source voltage of 250V and a maximum drain current of 11A. Its low on-state resistance, high switching speed, and low drain-source resistance make it an ideal choice for high-power, high-speed applications. This makes the NVA4153NT1G an excellent choice for smart phones, laptops, automotive and industrial applications, and other consumer electronic devices.

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