Allicdata Part #: | NVF2955PT1G-ND |
Manufacturer Part#: |
NVF2955PT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P CH 60V 1.7A SOT223 |
More Detail: | P-Channel 60V 1.7A (Ta) 1W (Ta) Surface Mount SOT-... |
DataSheet: | NVF2955PT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 492pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 185 mOhm @ 2.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NVF2955PT1G is a single N-Channel logic level enhancement MOSFET which is used in applications that require good switching performance and low switching losses. The device has an integrated protection circuit, which ensures current limiting and protection against thermal stress in the event of a short circuit. This MOSFET has excellent power and high temperature performance, making it an ideal choice for high power applications.
NVF2955PT1G has a wide range of application areas, such as motor drives and DC-DC converters. It can also be used in low-voltage switching circuits, DC-DC load switches, and in power distribution networks. It can also be used in lighting control and in automotive applications, such as ignition systems.
The main advantage of NVF2955PT1G MOSFET is that it has a very low gate threshold voltage. This means that the gate voltage required for effective switching is lower than for other types of MOSFETs. This gives the device a much higher current conduction capability and improved power dissipation. Moreover, its on-resistance is less than 1 Ohm, which helps reduce power dissipation and improves overall system efficiency.
The working principle of the NVF2955PT1G is based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This device has two terminals: drain and source. The gate terminal controls the current flow between the drain and the source. When a voltage is applied to the gate, electrons are attracted to it and the channel between the drain and the source is opened, allowing electrons to flow. The amount of current flow depends on the voltage applied to the gate. This MOSFET can be used as a switch, controlling the flow of high current with a small gate voltage.
The NVF2955PT1G is a robust and reliable device that is widely used for various applications. Its low on-resistance ensures a low power dissipation, which makes it an ideal solution for power electronics applications. In addition, its integrated protection circuit ensures safe operation and reliable service. This MOSFET is also available in a small package, so it can be easily integrated into different systems.
NVF2955PT1G is a versatile and reliable MOSFET that can be used for a wide variety of applications. Its low on-resistance and low gate threshold voltage make it an ideal choice for high power applications. Moreover, its built-in protection circuit ensures safe and reliable operation, making it an attractive option for power electronics applications.
The specific data is subject to PDF, and the above content is for reference
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