NVF2955T1G Discrete Semiconductor Products |
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Allicdata Part #: | NVF2955T1GOSTR-ND |
Manufacturer Part#: |
NVF2955T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 2.6A SOT223 |
More Detail: | P-Channel 60V 2.6A (Ta) 1W (Ta) Surface Mount SOT-... |
DataSheet: | NVF2955T1G Datasheet/PDF |
Quantity: | 950 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 (TO-261) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 492pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 170 mOhm @ 750mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.6A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVF2955T1G is a single-sided N-channel enhancement mode MOSFET from Vishay. It is designed to replace a variety of field effect transistors such as Triacs, SCRs, GTOs, etc. It is suitable for high-frequency, low-power switching applications in automotive, industrial, and consumer electronics applications. The operation and packaging of this device make it an ideal solution for a broad range of applications.
The NVF2955T1G is a very reliable MOSFET with a low on-resistance and a high-temperature operation range. It has a maximum drain current rating of 1.5A and a maximum drain-source voltage rating of 57V. It also features a maximum gate threshold voltage of 4V, a gate-source capacitance of 1.4pF, and a peak drain-source diode current of 4A.
The NVF2955T1G is designed for high-efficiency operation. Its high-frequency switching capability allows for a fast switching speed and a low-power dissipation. Its high-temperature operation range allows for use in a wide variety of environments. Its low on-resistance provides a low-power and reliable solution for applications that require high performance. The operating frequency range of this device is from 50 kHz to 250 kHz, which allows for applications in automotive and industrial applications.
The NVF2955T1G is available in a variety of packages such as micro dual inline (DIP), single-inline (SIP) and plastic mold. It can be used in a variety of applications ranging from air conditioners to mobile phones and motor control applications. It can be used in a wide variety of power stages, high-frequency switching applications, and static switching applications. It is also used for the protection of various electrical components.
The NVF2955T1G is a very reliable and efficient MOSFET. Its low on-resistance allows for low-power dissipation and its high-temperature operation range makes it suitable for use in a wide variety of environments. Its high-frequency switching capability also allows it to be used in a variety of applications. Additionally, its wide range of packages makes it perfect for a number of applications requiring different types of packaging.
The working principle of NVF2955T1G involves the use of two essential elements - the gate and the drain. It is a voltage-controlled device which is normally used in off-state. When a gate voltage is applied, a current flow occurs in the channel between the source and the drain. The higher the gate voltage, the greater the current flow. This produces a current in the drain, which is proportional to the gate voltage. The current in the drain also depends on the temperature of the environment, which affects the operating parameters of the MOSFET.
The NVF2955T1G has a variety of applications in automotive, industrial and consumer electronics. It can be used in air conditioners, motor control applications, static switching applications, static switching applications and low-power, high-frequency switching applications. It is also used in relay circuits and in the protection of transformer coils. Its high-temperature operation range allows it to be used in a variety of environments. With its high-frequency switching capability, it can provide high-efficiency switching and low-power dissipation.
The specific data is subject to PDF, and the above content is for reference
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