NVF3055-100T1G Discrete Semiconductor Products

The NVF3055-100T1G is a power field effect transistor (FET) designed for a wide range of applications. This device is suitable for use in resonant converters, synchronous rectifiers, motor control, and other applications that require robust performance from a single device. It is an enhancement-mode device which features an integral body diode with very low reverse recovery characteristics and a low on-resistance, allowing for high performance yet cost-effective designs.

The NVF3055-100T1G is a 30V single N-Channel MOSFET with an integrated anti-saturation Schottky diode. It is a vertical D-MOS transistor, specifically designed for low voltage, high current and high power applications. Operating at an optimum drain current of 100A, the NVF3055-100T1G provides low on-resistance and low gate charge. This feature allows for an improved efficiency while controlling high-current switching applications.

The NVF3055-100T1G offers low capacitance and low gate-drain charge to minimize the power losses associated with fast switching operations. This feature also increases the switching speed, improving the efficiency of the device. It also features an increased body diode reverse recovery time, enhancing noise immunity as it reduces remaining charge during switching operations.

The NVF3055-100T1G utilizes a low-voltage construction and provides a current control channel for enhanced system control. It operates at a maximum input voltage of 30V, allowing for high power switchin applications from 12V to 30V. The device also features an improved thermal and electrical performance, offering more reliable operation in high temperature applications.

The NVF3055-100T1G is designed to work in a variety of applications. Its low on-resistance and high current handling capability make it suitable for automotive, industrial, and telecom applications, such as: DC/DC converters, motor drives, power equipment, welders, and power supplies. The NVF3055-100T1G also provides excellent protection against overcurrent, overvoltage and thermal overloads.

The NVF3055-100T1G utilizes an N-channel MOSFET structure and is operated using the principle of a \'channel\' between the source and the drain. This channel is activated by applying a voltage to the gate of the device, which is connected to the source. When a voltage is applied to the gate of the device, the resistance between the drain and the source drops significantly, allowing current to flow freely through the device. This current will continue to flow until the gate voltage is removed, at which point the resistance between the drain and the source will return, and no current will flow.

The NVF3055-100T1G is designed to offer superior performance in a wide range of applications. Its low on-resistance and high current capability allow for efficient operation while its enhanced thermal and electrical performance maximizes the system\'s efficiency and longevity. This device is suitable for a variety of applications ranging from automotive, industrial and telecom.