NVF3055L108T3G Allicdata Electronics
Allicdata Part #:

NVF3055L108T3GOSTR-ND

Manufacturer Part#:

NVF3055L108T3G

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 3A SOT223
More Detail: N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-...
DataSheet: NVF3055L108T3G datasheetNVF3055L108T3G Datasheet/PDF
Quantity: 1000
4000 +: $ 0.19855
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 120 mOhm @ 1.5A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The NVF3055L108T3G is a FET (Field-Effect Transistor) that belongs to a category of transistors called MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is a single-voltage, n-channel, non-polarized device, capable of handling up to 30A and ±20V. It offers an on-resistance of 45 milli-ohms and a threshold voltage of 1.5V. It is an ideal choice for applications where low on-resistance, high-current handling capability, and fast switching speeds are required.

FETs essentially provide a "current-controlled current sink" and are widely used in both digital and analog electronics. They are well suited for applications where high speed and low power dissipation are essential. FETs are also used as amplifiers and analog switches. The metal oxide surface acts as a gate, controlling the current between two terminals in the device.

The working principle of the NVF3055L108T3G is based on the same principles as all FETs. The metal oxide film acts as an insulator that is placed between the drain and source terminals of the device. When a positive voltage is applied to the gate terminal, it induces a slight electric field from the gate to the drain and source terminals, which reduces the resistance between the terminals. This decreases the amount of current that can pass through the device, thereby making the device “ON”. Conversely, when the voltage applied to the gate is negative, the electric field is reversed and the current passing through the device is stopped, which turns the device “OFF”.

The NVF3055L108T3G is primarily intended for use as a power switch in consumer electronics, such as DVD players and high-definition televisions. It is also used as a power amplifier in cars, as well as an amplifier in high-fidelity (hi-fi) audio systems. Its high-current capability makes it very suitable for switching and controlling power in high-power applications, such as lighting and air-conditioning systems.

The NVF3055L108T3G is a robust and reliable device that is widely used in a variety of applications. Its high current handling capability, low on-resistance, and fast switching speed make it an ideal choice for power switching applications. Additionally, its metal oxide film gate insulation ensures excellent thermal and electrical characteristics, thus making the device suitable for use in even the most challenging environments.

The specific data is subject to PDF, and the above content is for reference

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