Allicdata Part #: | NVF3055L108T3GOSTR-ND |
Manufacturer Part#: |
NVF3055L108T3G |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 3A SOT223 |
More Detail: | N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-... |
DataSheet: | NVF3055L108T3G Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.19855 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 1.5A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The NVF3055L108T3G is a FET (Field-Effect Transistor) that belongs to a category of transistors called MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is a single-voltage, n-channel, non-polarized device, capable of handling up to 30A and ±20V. It offers an on-resistance of 45 milli-ohms and a threshold voltage of 1.5V. It is an ideal choice for applications where low on-resistance, high-current handling capability, and fast switching speeds are required.
FETs essentially provide a "current-controlled current sink" and are widely used in both digital and analog electronics. They are well suited for applications where high speed and low power dissipation are essential. FETs are also used as amplifiers and analog switches. The metal oxide surface acts as a gate, controlling the current between two terminals in the device.
The working principle of the NVF3055L108T3G is based on the same principles as all FETs. The metal oxide film acts as an insulator that is placed between the drain and source terminals of the device. When a positive voltage is applied to the gate terminal, it induces a slight electric field from the gate to the drain and source terminals, which reduces the resistance between the terminals. This decreases the amount of current that can pass through the device, thereby making the device “ON”. Conversely, when the voltage applied to the gate is negative, the electric field is reversed and the current passing through the device is stopped, which turns the device “OFF”.
The NVF3055L108T3G is primarily intended for use as a power switch in consumer electronics, such as DVD players and high-definition televisions. It is also used as a power amplifier in cars, as well as an amplifier in high-fidelity (hi-fi) audio systems. Its high-current capability makes it very suitable for switching and controlling power in high-power applications, such as lighting and air-conditioning systems.
The NVF3055L108T3G is a robust and reliable device that is widely used in a variety of applications. Its high current handling capability, low on-resistance, and fast switching speed make it an ideal choice for power switching applications. Additionally, its metal oxide film gate insulation ensures excellent thermal and electrical characteristics, thus making the device suitable for use in even the most challenging environments.
The specific data is subject to PDF, and the above content is for reference
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