Allicdata Part #: | NVGS3130NT1G-ND |
Manufacturer Part#: |
NVGS3130NT1G |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 4.2A 6TSOP |
More Detail: | N-Channel 20V 4.2A (Ta) 600mW (Ta) Surface Mount 6... |
DataSheet: | NVGS3130NT1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.31240 |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 600mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 935pF @ 16V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 20.3nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 5.6A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NVGS3130NT1G is a 30 V N-Channel Enhancement Mode Field-Effect Transistor (FET). It is a part of the 31V NVG NexFET series. As a low-voltage N-channel power MOSFET, this device provides excellent RDS(on) ratio, fast switching speed, and strong avalanche performance. This robust device is an ideal choice for use when efficiency, high power density and low gate-to-source charge is needed.
The NVGS3130NT1G is commonly used in many applications such as DC/DC converters, pre-driver and gate drivers, boosters, boost converters, and light dimmers. It is a silicon N-Channel MOSFET and is made from 6 layers of silicon. It contains a gate, source and drain metal electrode which are insulated from each other by a thin gate layer. The gate and source metal electrodes are used to control the flow of current between source and drain.
The working principle of NVGS3130NT1G is based on the MOSFET operating mode. It works by using an electric field across a PN junction or a MOSFET structure to control the current flow. When a positive voltage is applied to the gate, it creates an electric field that attracts electrons from the source region to the gate-drain region. This increases the conductivity between the source and drain and current flows through the device.
The NVGS3130NT1G has a typical RDS(on) of 0.129 Ohm, a maximum Drain Source Voltage of 30 V, and a maximum Drain Current of 8.9 A. The device also has a low gate-to-source capacitance (Ciss), which helps to reduce the gate charge giving it a better efficiency. The device is designed to have a very fast switching speed and is capable of delivering a high current to the load. The device also has excellent avalanche performance, which makes it ideal for use in applications where high-performance is needed.
The NVGS3130NT1G is an ideal choice for use in many applications where high efficiency, high power density and low gate-to-source charge is needed. It is widely used in applications such as DC/DC converters, pre-driver and gate drivers, boosters, boost converters, and light dimmers.
The specific data is subject to PDF, and the above content is for reference
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