NVGS3443T1G Discrete Semiconductor Products |
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Allicdata Part #: | NVGS3443T1GOSTR-ND |
Manufacturer Part#: |
NVGS3443T1G |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 2A 6-TSOP |
More Detail: | P-Channel 20V 3.1A (Ta) Surface Mount 6-TSOP |
DataSheet: | NVGS3443T1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.11567 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 565pF @ 5V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 4.4A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.1A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVGS3443T1G MOSFET is a high-performance surface-mountable field-effect transistor (FET) specified in various applications. It utilizes a single dielectric isolation structure and is optimized for use in low profile, space-saving small-outline packages, thus providing high power efficiency and excellent device performance. Manufactured by Fairchild Semiconductor, the device features a 3-pin configuration and is suitable for high speed switching and high current applications. The NVGS3443T1G MOSFET is a single-gate FET, or SGFET. Single-gate FETs are semiconductor devices, much like metal-oxide semiconductor field-effect transistors, or MOSFETs, but with only one significant difference. A MOSFET has two gate connections, while a SGFET has only one gate connection. This makes the SGFET more efficient and less expensive to produce, since fewer pins and electrical contacts are needed for the FET to operate. In a single-gate FET, the gate terminal is used as both an input and an output. The gate acts as a switch to control current flow through the channel between the source and drain terminals of the FET. When a positive voltage is applied to the gate terminal, a conducting “channel” is formed between the source and drain terminals. Current is then able to flow in both directions between the source and the drain, and the FET operates in the ON state. Conversely, when a negative voltage is applied to the gate terminal, the channel between the source and drain becomes non-conductive, thus disabling the current flow. In the family of single-gate FETs, the NVGS3443T1G MOSFET is particularly suitable for applications that require a low output impedance and high current capability. Due to its high power efficiency, it is ideal for systems that require fast switching times and high speed operations. Additionally, its small surface-mountable format provides a low profile and space-saving solution for applications that require a relatively small footprint compared to other FETs. The NVGS3443T1G MOSFET is widely used in telecommunications and digital equipment. It can be used in applications such as logic level conversion, clock synchronization, multiplexers, and power distribution circuits. Other applications include switching power converters, high current amplifiers, high speed motors, and pulse generators. Due to its ability to switch rapidly, the NVGS3443T1G MOSFET is also suitable for low voltage applications such as 5.0V logic or 3.3V logic. The NVGS3443T1G MOSFET is a versatile component that is widely used in a varied number of applications. Its low output impedance and high current capabilities make it ideal for applications that require fast switching and high power efficiency. The device is also suitable for small-outline packages due to its small form-factor, surface-mountable format. Furthermore, it is used in 5.0V and 3.3V logic applications due to its ability to rapidly switch at low voltages.
The specific data is subject to PDF, and the above content is for reference
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