NVR5124PLT1G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	470mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	240pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	4.3nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	230 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	1.1A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NVR5124PLT1G application field and working principle

IntroductionNVR5124PLT1G is a new generation of single N-channel insulated gate bipolar transistor (IGBT) that is leading the way to a more efficient and reliable tomorrow. It has many benefits including an enhanced switching speed and excellent controllability, yet minimizing power supply noise. The high temperature superiority allows designers to develop products with improved performance, reducing the cost and complexity of the entire system. NVR5124PLT1G is available in several configurations and can be used in a wide variety of applications.Application FieldNVR5124PLT1G is especially suitable for switching applications where high frequency, high switching speed and low power and thermal losses are required. It can be used in power amplifiers, transient voltage and thermal compensation control, railway power systems control, stepping motor control and various types of displays. The NVR5124PLT1G is also suitable for high-voltage junction module, high-voltage converter and various types of rectifiers. Other applications include automotive electronics, lighting circuits and power supply regulators.Working PrincipleNVR5124PLT1G is an insulated gate bipolar transistor (IGBT). It is created by combining a power MOSFET and a bipolar transistor. The gate terminal of the MOSFET is insulated with a thicker layer of insulation and is connected to the emitter of the bipolar transistor. The MOSFET’s gate terminal is then connected to the collector of the bipolar transistor. The drain terminal of the MOSFET is the output and the source terminal is the input connection.The main principle behind the operation of NVR5124PLT1G is the “Miller current mechanism”, which helps in increasing the current gain of the device. The Miller current is responsible for channeling part of the output current to the gate terminal of the MOSFET, thus increasing the current available at the gate and allowing the switching of the device to take place at much higher frequencies than other bi-polar transistors.The controlling of the NVR5124PLT1G is also done using pulse width modulation (PWM). This technique is used to efficiently control the power delivery and reduce harmonic distortion resulting from the use of the IGBT.AdvantagesNVR5124PLT1G presents a number of advantages when compared to other bi-polar transistors. First of all, it has improved switching speed and better controllability, allowing it to be used in switching applications that require higher frequencies. Secondly, it has a reduced power and thermal losses and therefore, can be used in energy-efficient applications and also in applications that require heat dissipation. Finally, it has higher temperature ratings, which enable the development of products with improved performance and reduced cost.ConclusionThe NVR5124PLT1G presents a vast array of advantages for the use in power systems and switching applications, including improved switching speed, reduced power and thermal losses, greater temperature ratings and better controllability. It is a suitable choice for applications such as power amplifiers, transient voltage and thermal compensation control, railway power systems control and stepping motor control, among many others. The Miller current mechanism and the pulse width modulation (PWM) used to control the NVR5124PLT1G also contributes to a more efficient utilization of the device and its performance.

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