NVR5198NLT3G Discrete Semiconductor Products |
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| Allicdata Part #: | NVR5198NLT3GOSTR-ND |
| Manufacturer Part#: |
NVR5198NLT3G |
| Price: | $ 0.09 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 60V 2.2A SOT23 |
| More Detail: | N-Channel 60V 1.7A (Ta) 900mW (Ta) Surface Mount S... |
| DataSheet: |  NVR5198NLT3G Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.08499 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 900mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 182pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 5.1nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 155 mOhm @ 1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.7A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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Introduction
NVR5198NLT3G is a power MOSFET that utilizes advanced n-type vertical trench technology to provide excellent RDS(ON) and low gate charge. It is specially designed to reduce the forward bias gate-source capacitance (CGfs) level, which is critical in high frequency switching applications. This device belongs to the Transistors - FETs, MOSFETs - Single family.
Application Field
This N-channel enhancement mode MOSFET was especially designed for high frequency switching applications such as frequency convertors, switch mode power supplies, DC-DC converters, choppers, DC-servo motor control, etc. It is also suitable for audio electronic switching and amplifying.
Working Principle
Due to its specific structure, the NVR5198NLT3G has a low gate control power consumption and low gate-source capacitance, which enables high switching frequency operations. That principle is called "switching on fast and switch off fast". During its switching off transition, the device is able to dissipate large amounts of energy.
Features
- Lower On-Resistance
- Lower Input Capacitance
- Low Input/Output Leakage
- Reduced Gate Charge
- High Switching Frequency
- High Speed Switching
Operation Mode
The NVR5198NLT3G operates in the enhancement mode. It means that the Drain-Source RDS(ON) increases with the rise of the gate-source voltage, while the on-state current remains constant. In the arrival of an appropriate gate voltage, or an adequate source-gate voltage, it can turn the transistor on, leading to the flow of the drain current.
Package Types
- D-PAK
- TO-252
- TO-220F
Conclusion
The NVR5198NLT3G is a great n-channel enhancement mode MOSFET for use in high frequency switching applications. It is specially designed to reduce the forward bias gate-source capacitance and enable high speed switching. Moreover, its features also enable it to dissipate large amounts of energy. This device belongs to the Transistors - FETs, MOSFETs - Single family.
The specific data is subject to PDF, and the above content is for reference
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