NVTJD4105CT1G

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NVTJD4105CT1G is an n-channel enhancement mode power field effect transistor (FET) with a low resistance RDS(ON) and wide drain-source voltage ratings, ideal for use in the fast switching applications. The source is electrically connected to the substrate, enabling improved electrical stability. Its ultra-small form factor makes it suitable for a variety of power supply applications. This device also includes a built-in diode for efficient reverse ESD protection, making it suitable for use in high-reliability systems.

The NVTJD4105CT1G is designed to drive loadings with high current and low gate voltages without the need for a separate drive transistor. It can switch fast with low gate-source capacitances, and the high-density packaging makes it ideal for applications with limited space. This device is widely used in industrial, automotive, and consumer electronics applications, such as voltage regulators, battery chargers and DC-DC converters.

The NVTJD4105CT1G is an N-channel depletion mode JFET with a gate threshold voltage (VGS) of -2.5V to -4V, which is primarily responsible for its low on-resistance. This allows for efficient and fast switching, ideal for high current applications. It also features a gate terminal, source and body terminals and a drain terminal. When a negative voltage is applied to the gate, a depletion region is created between the drain and the source, inversely scaling the current flow through the transistor.

The source is connected to the body, also referred to as the substrate. When the gate voltage is below the threshold voltage, the depletion region blocks current flow between the source and the drain. This allows for efficient fast switching applications. With its low on-resistance and wide drain-source voltage ratings, the NVTJD4105CT1G can provide current handling of up to 30A while maintaining high efficiency.

The device also has a built-in diode which can provide efficient protection against ESD events. This diode is connected between the drain and source and provides a fast discharge path away from the sensitive areas of the device. The diode also limits static discharge current flow, preventing degradation of the transistor’s performance or destruction of the device.

The NVTJD4105CT1G is available in a very small SOT-23 package, making it suitable for applications with limited space such as portable electronics and battery-powered systems. It is also RoHS compliant, making it suitable for use in green energy systems.

Overall, the NVTJD4105CT1G is an efficient n-channel JFET with an ultra-small form factor and wide drain-source voltage ratings. Its low resistance RDS(ON), fast switching capability, and built-in ESD protection make it an ideal choice for use in applications requiring high current handling and efficient power consumption.

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