NVTJD4158CT1G

NVTJD4158CT1G is a p-channel enhancement-mode vertical DMOS FET (V-DMOS). It is classified as a single transistor.

This FET is composed of p-channel, vertical DMOS and can be used for applications such as high- or low-side switches, bus switches, and voltage-controlled switches. The NVTJD4158CT1G has an operating temperature range of -55°C to 175°C and a maximum drain current of 16A. It is also designed with a very low on resistance, making it a suitable choice for high-current applications.

The working principle of the NVTJD4158CT1G is based on the use of an insulated-gate field-effect transistor (IGFET), which consists of two closely spaced parallel metal plates, one of which acts as a gate and the other acts as a drain or source. When a voltage is applied to the gate, it creates a field of electric charges that can be used to control the flow of current through the FET. By varying the voltage applied to the gate, the current can be changed from full off to full on. This makes the NVTJD4158CT1G well suited for use as a switch or voltage-controlled switch.

This FET has several applications. It is ideal for switching high-current applications such as motors, lights, and power supplies. It can also be used to switch low-current sensitive signals such as audio circuits. Additionally, this FET can also be used in DC-DC converters, linear power supplies, and power controllers.

The NVTJD4158CT1G is a widely used FET due to its low on resistance and its ability to efficiently and reliably switch high currents. It is an energy-efficient, reliable, and economical choice for use in many applications requiring reliable power switching.