PBLS2002D,115 Allicdata Electronics
Allicdata Part #:

1727-5691-2-ND

Manufacturer Part#:

PBLS2002D,115

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN PREBIAS/PNP 0.6W 6TSOP
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Bias...
DataSheet: PBLS2002D,115 datasheetPBLS2002D,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05358
6000 +: $ 0.05061
15000 +: $ 0.04614
30000 +: $ 0.04316
75000 +: $ 0.03969
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 220 @ 500mA, 2V
Base Part Number: PBLS2002
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Power - Max: 600mW
Frequency - Transition: 185MHz
Current - Collector Cutoff (Max): 1µA, 100nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A
Series: --
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V, 20V
Current - Collector (Ic) (Max): 100mA, 1A
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The PBLS2002D,115 is a multi-emitter array of pre-biased NPN transistors, qualified for use in the automotive industry, and with an improved temperature region of -55°C to 150°C. It is a compact, low cost solution that is used to drive high currents using a small number of transistors. The actual device is described in detail in the datasheet of the PBLS2002D,115.

The main features of PBLS2002D,115 are its integrated temperature regulator, which ensures that the temperature of the device remains within a defined operating range. It also has a built in low voltage protection circuit which prevents the device from being damaged in case of extreme voltages. The PBLS2002D,115 also features a low on-chip resistance, which makes it suitable for high frequency applications. In addition, it also has a built in ESD protection which safeguards the device from electrostatic discharge.

The working principle of PBLS2002D,115 is based on the common base current gain, which occurs when a PN junction is biased so that the base-emitter junction is forward biased and the base-collector junction is reverse biased. In the case of the PBLS2002D,115, the base pins of the individual NPN transistors are pre-biased, which allows for the current gain to be achieved without any external circuits. When this bias is applied, it causes a current to flow through the base-emitter junction of the device and this current is amplified by the common base current gain. This amplified current is then supplied to the load and the device’s output is used to control the load current.

The PBLS2002D,115 is used in many applications, for example in the automotive industry for signal processing and power control, in consumer electronics for controlling motors, solenoid valves, relays, and other powered components, and in industrial applications for various control and signal processing tasks. It is used in applications where its temperature stability, low voltage protection, and ESD protection features are of great value.

The PBLS2002D,115 provides an efficient solution for driving high current loads with a small number of transistors, and its many features make it a versatile device for many applications. It is also a cost effective solution that can be used in many different types of applications.

The specific data is subject to PDF, and the above content is for reference

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