Allicdata Part #: | 1727-5691-2-ND |
Manufacturer Part#: |
PBLS2002D,115 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS NPN PREBIAS/PNP 0.6W 6TSOP |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Bias... |
DataSheet: | PBLS2002D,115 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05358 |
6000 +: | $ 0.05061 |
15000 +: | $ 0.04614 |
30000 +: | $ 0.04316 |
75000 +: | $ 0.03969 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V / 220 @ 500mA, 2V |
Base Part Number: | PBLS2002 |
Supplier Device Package: | 6-TSOP |
Package / Case: | SC-74, SOT-457 |
Mounting Type: | Surface Mount |
Power - Max: | 600mW |
Frequency - Transition: | 185MHz |
Current - Collector Cutoff (Max): | 1µA, 100nA |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A |
Series: | -- |
Resistor - Emitter Base (R2): | 4.7 kOhms |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V, 20V |
Current - Collector (Ic) (Max): | 100mA, 1A |
Transistor Type: | 1 NPN Pre-Biased, 1 PNP |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PBLS2002D,115 is a multi-emitter array of pre-biased NPN transistors, qualified for use in the automotive industry, and with an improved temperature region of -55°C to 150°C. It is a compact, low cost solution that is used to drive high currents using a small number of transistors. The actual device is described in detail in the datasheet of the PBLS2002D,115.
The main features of PBLS2002D,115 are its integrated temperature regulator, which ensures that the temperature of the device remains within a defined operating range. It also has a built in low voltage protection circuit which prevents the device from being damaged in case of extreme voltages. The PBLS2002D,115 also features a low on-chip resistance, which makes it suitable for high frequency applications. In addition, it also has a built in ESD protection which safeguards the device from electrostatic discharge.
The working principle of PBLS2002D,115 is based on the common base current gain, which occurs when a PN junction is biased so that the base-emitter junction is forward biased and the base-collector junction is reverse biased. In the case of the PBLS2002D,115, the base pins of the individual NPN transistors are pre-biased, which allows for the current gain to be achieved without any external circuits. When this bias is applied, it causes a current to flow through the base-emitter junction of the device and this current is amplified by the common base current gain. This amplified current is then supplied to the load and the device’s output is used to control the load current.
The PBLS2002D,115 is used in many applications, for example in the automotive industry for signal processing and power control, in consumer electronics for controlling motors, solenoid valves, relays, and other powered components, and in industrial applications for various control and signal processing tasks. It is used in applications where its temperature stability, low voltage protection, and ESD protection features are of great value.
The PBLS2002D,115 provides an efficient solution for driving high current loads with a small number of transistors, and its many features make it a versatile device for many applications. It is also a cost effective solution that can be used in many different types of applications.
The specific data is subject to PDF, and the above content is for reference
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