PBLS6003D,115 Allicdata Electronics
Allicdata Part #:

1727-5706-2-ND

Manufacturer Part#:

PBLS6003D,115

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN PREBIAS/PNP 0.6W 6TSOP
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Bias...
DataSheet: PBLS6003D,115 datasheetPBLS6003D,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05358
6000 +: $ 0.05061
15000 +: $ 0.04614
30000 +: $ 0.04316
75000 +: $ 0.03969
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 150 @ 500mA, 5V
Base Part Number: PBLS6003
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Power - Max: 600mW
Frequency - Transition: 185MHz
Current - Collector Cutoff (Max): 1µA, 100nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 340mV @ 100mA, 1A
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V, 60V
Current - Collector (Ic) (Max): 100mA, 700mA
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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PBLS6003D,115 application field and working principle

PBLS6003D,115 is a BC858 NPN Pre-Biased Bipolar Transistor Array, meaning that the transistors are already biased in a specific way that allows them to take advantage of the manufacturing process to attain even greater performance advantages. It is designed for applications in both high and low frequency switching and audio amplifier circuits, where reliability and a high voltage capability are needed. Its high on-state current allows for easier switching. This BC858 transistor is especially suitable for power switchable circuits.

Features:

  • Integrated Pre-Biased NPN transistor array
  • Low collector-emitter saturation voltage
  • Low power dissipation
  • High switching speed
  • High breakdown voltage
  • Small package size

Working Principle of PBLS6003D,115

Like other bipolar transistors, PBLS6003D, 115 is based on the fact that when the base current is applied to the emitter junction, the wider collector region of the transistor will create an excess of electrons that will then be "collected" by the collector and passed through the emitter. This is the basic principle behind all transistors, but the PBLS6003D,115 changes this slightly by pre-biasing some of the collector current, meaning that a base current that is even smaller than usual can be used to activate the transistor. This is advantageous because it helps keep the power consumption of the transistor at a minimum, while still achieving the same switching effect.

The PBLS6003D,115 also benefits from the fact that it is pre-biased, because it can switch faster than standard transistors. This is because there is less time for the electrons to move around, resulting in a faster switching time. Additionally, because it is pre-biased, it has a higher breakdown voltage, which helps it to handle higher voltages than regular transistors. Finally, it has a lower collector-emitter saturation voltage, which helps it maintain a more stable switching voltage and reduces power dissipation.

Applications of PBLS6003D,115

PBLS6003D,115 can be used in any high or low frequency switching circuit, as well as amplifier circuits that require a higher voltage capability. Its pre-bias allows it to operate more efficiently than traditional transistors, and its low power dissipation makes it ideal for applications where power conservation is a priority. Additionally, it can be used in audio amplifier circuits due to its high on-state current, and is a suitable choice for circuits that need to be switched on and off frequently.

In conclusion, the PBLS6003D,115 is a reliable, efficient pre-biased NPN transistor array that offers a number of advantages over standard transistors, making it suitable for both high and low frequency switching applications, as well as audio amplifier circuits. Its pre-biasing makes it faster and more power-efficient than traditional transistors, and its small size helps to keep power dissipation to a minimum.

The specific data is subject to PDF, and the above content is for reference

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