PBLS2021D,115 Allicdata Electronics
Allicdata Part #:

1727-2373-2-ND

Manufacturer Part#:

PBLS2021D,115

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN PREBIAS/PNP 6TSOP
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Bias...
DataSheet: PBLS2021D,115 datasheetPBLS2021D,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.09277
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA, 1.8A
Voltage - Collector Emitter Breakdown (Max): 50V, 20V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V / 200 @ 1A, 2V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A
Current - Collector Cutoff (Max): 1µA, 100nA
Frequency - Transition: 130MHz
Power - Max: 760mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Description

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The PBLS2021D,115 is a special type of semiconductor device, which is known as a pre-biased bipolar junction transistor (BJT) array. It is designed for use in a variety of applications including power, RF, and optical amplification, and is especially popular for use in communication systems. This array consists of two N-type and two P-type transistors. Each transistor has an emitter, base, and collector terminal. The pre-biased array is designed to provide greater bias stability than a conventional BJT array.

The major application field of the PBLS2021D,115 is in communication systems. It is used in transmitters, receivers, modulators, frequency multipliers, mixers and antenna amplifiers. It is also used in the power control and biasing circuits of various power supplies. Furthermore, the array can be used for optical transceivers, radio frequency amplifiers, and optical instrumentation in the medical and scientific fields. All these applications make the PBLS2021D,115 ideal for a wide range of applications.

The working principle of the PBLS2021D,115 is based on the concept of pre-biased BJT arrays. The device has an energized base with a pre-set voltage, which serves as the bias voltage for the transistors. This voltage is the same for both the N and P transistors. As a result, active operation of the array can be initiated without the usual voltage-dependent biasing techniques. The output of the array is also larger because of the pre-biased base voltages. Therefore, the pre-biased array has greater efficiency and stability than a conventional BJT array.

PBLS2021D,115 is also capable of providing increased output power and better stability. This is because of its design, which enables the device to utilize a greater degree of current gain, resulting in more power and less distortion. In addition, the pre-biased array is also more tolerant to temperature changes and load variations, making it suitable for operation in many different types of environments. The device is also known for its high resistance to ESD (electro-static-discharge) influences, which helps to protect sensitive electronics from high voltage spikes or current surges.

The PBLS2021D,115 is also designed to minimize the number of parts needed for assembly, creating a cost-effective device for many applications. The device is readily available in a variety of packages, such as TO-92, SOT-23, TO-126 and SC-70, and can be bought from many electronic equipment suppliers. As such, the PBLS2021D,115 is an excellent choice for use in most applications where a pre-biased BJT array is needed.

The specific data is subject to PDF, and the above content is for reference

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