PBLS2003D,115 Allicdata Electronics
Allicdata Part #:

1727-5692-2-ND

Manufacturer Part#:

PBLS2003D,115

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN PREBIAS/PNP 0.6W 6TSOP
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Bias...
DataSheet: PBLS2003D,115 datasheetPBLS2003D,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05358
6000 +: $ 0.05061
15000 +: $ 0.04614
30000 +: $ 0.04316
75000 +: $ 0.03969
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 220 @ 500mA, 2V
Base Part Number: PBLS2003
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Power - Max: 600mW
Frequency - Transition: 185MHz
Current - Collector Cutoff (Max): 1µA, 100nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V, 20V
Current - Collector (Ic) (Max): 100mA, 1A
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PBLS2003D, 115 is a transistor array, pre-biased type, comprised of two bipolar junction transistors (BJTs) integrated into a single package. This particular part is designed to provide an economical and easy-to-use solution when an integrated circuit is not available. It is a great choice for low-power applications, offering a wide range of functions and package types and relatively low cost.

The PBLS2003D, 115 is a Darlington arranged BJT, meaning it consists of two layers of transistors. The first layer is known as the “base” and applies to the collector voltage of the second layer. The base is usually constructed of a thin, heavily doped semiconductor of the same material as the second layer, and can be likened to a controllable switch. The combination of the two transistors creates a circuit which is more sensitive to the input and allows for greater current gain.

Unlike a single transistor, the Darlington arrangement allows for a higher current gain and more efficient operation. The PBLS2003D, 115 is pre-biased, meaning it is set and ready to go for your application. This allows for quick setup, less time tuning and generally easier overall installation. Other features of the PBLS2003D, 115 include reverse polarity protection, high collector current gain, high collector/emitter breakdown voltage, and high switching speed.

The most common application for the PBLS2003D, 115 is as a low-power amplifier. It works to boost the input current to a level suitable for a larger output current. Other potential applications for this transistor include radio transmitting and receiving systems, phase control systems, DC motor controls, and power control circuitry, among others.

The PBLS2003D, 115 is easy to use and provides a low-cost solution to many low-power applications. It is smaller than a regular BJT and requires fewer external components, yet still allows you to take advantage of the Darlington current gain. With its simple operation, the PBLS2003D, 115 provides few surprises and is a great choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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