PC28F128P30B85E Allicdata Electronics
Allicdata Part #:

PC28F128P30B85E-ND

Manufacturer Part#:

PC28F128P30B85E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128M PARALLEL 64EASYBGA
More Detail: FLASH - NOR Memory IC 128Mb (8M x 16) Parallel 52M...
DataSheet: PC28F128P30B85E datasheetPC28F128P30B85E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 85ns
Base Part Number: 28F128P30
Supplier Device Package: 64-EasyBGA (10x13)
Package / Case: 64-TBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7 V ~ 2 V
Memory Interface: Parallel
Access Time: 85ns
Series: StrataFlash™
Clock Frequency: 52MHz
Memory Size: 128Mb (8M x 16)
Technology: FLASH - NOR
Memory Format: FLASH
Memory Type: Non-Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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PC28F128P30B85E is a non-volatile memory (NVM) device in which a combination of multiple non-volatile memory cells is used in an array. This multi-chip non-volatile memory product is designed with Advanced Memory Technology that leverages 80 nm process for fast operation and low power. This technology makes the device suitable for storage and memory applications that require a high level of performance and data density.

The PC28F128P30B85E memory device has many applications in different industries due to its low power, high speed and reliability. It is commonly used for consumer electronics, automotive applications and telecommunication applications. It has also found applications in industrial and medical applications where data retention and high performance are important.

The PC28F128P30B85E non-volatile memory device is constructed with NAND gates, also known as NOR gates. The NAND gates are used to store and read data from the memory array. The NAND gates are connected in a series to form a chain of memory cells, with each cell storing a bit of data. Each memory cell can be programmed separately.

The PC28F128P30B85E’s data bus is 8 bits wide, allowing it to store 8 bits of data in a single cell. The data bus can be increased to 16 or 32 bits for higher capacity storage. The device has an operational speed of up to 66 MHz with a data transfer rate of up to 2Gbps.

The PC28F128P30B85E memory device has many features to ensure data reliability and integrity. It has an on-die ECC circuitry which provides error detection and correction for data stored in the memory array. The device also has on-chip parity which can be used to detect storage errors. The device also has an on-chip write and read cache which helps improve performance by reducing wait states.

The PC28F128P30B85E memory device features a unique SmartCore I/O interface which is used to communicate with external devices. This interface provides an improved way to interact with the device and gives it flexibility to access and manipulate data.

The PC28F128P30B85E memory device has a number of security features which provide a secure environment for data storage and access. The on-chip ECC, parity and write/read cache provide additional security related functions. The device supports write protection so as to prevent unauthorized access. The device also has an authentication feature which can be used to securely unlock the device after it has been locked.

In summary, the PC28F128P30B85E non-volatile memory device is a high performance, reliable and secure device that can be used in many different applications. Its features include fast data transfer speeds, error correction and prevention, powerful security features and SmartCore I/O interface. It is suitable for a wide range of applications that require high performance and data density.

The specific data is subject to PDF, and the above content is for reference

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