PC28F320J3D75D TR

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Memory: PC28F320J3D75D TR Application Field and Working Principle

The PC28F320J3D75D TR is a type of memory called NOR Flash Memory. It is a non-volatile type of memory and has a wide range of applications. The PC28F320J3D75D TR provides a convenient solution for code storage, system data storage, and product identification applications. Specifically, it is a perfect fit for embedded applications in the automotive, consumer and industrial markets.

The PC28F320J3D75D TR is built with a 0.55 micron Process Technology and is fabricated using an Advanced Bipolar CMOS Silicon process. It has an array footprint of 1.14 millimeters squared and a typical read voltage range of 2.5v to 3.6v. The memory has a data transfer rate of 60 Mbps and is programmed at 2.7v.

The working principle of the PC28F320J3D75D TR is to store electrical energy in a reverse biased junction, which will prevent its flow in a forward biased junction. Ultimately, this is achieved through an array of transistors in the form of cells that operate like capacitors and allow bits of data to be stored as electrical charges. A charge, in this case, is measured as a voltage level and can either be high or low. A 1 is stored as a high voltage level and a 0 as a low voltage level. Each cell can store 1-bit of data and collections of cells form words.

The PC28F320J3D75D TR has several features that help optimize the memory performance. It supports multi-bit erasure with block erase and column-wise program verify and erase verification. Furthermore, the memory supports DoD (Device Operation Data) tracking, allows for x8/x16 reads and supports low voltage programming (LVP). System-level features include sector/block locking with address register for faster access time and program and sector suspend/resume for extended program and erase time.

The PC28F320J3D75D TR is an ideal memory solution forcode storage, system data storage, and product identification applications in the automotive, consumer and industrial markets. Its sensitive programming voltage and f ast data transfer rate make it an efficient and effective memory component. It also possesses several features that optimize performance and reliability, making it exceptionally suitable for embedded applications.

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