PC28F256P33B85B TR

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As technology evolves and the demand for higher-performance memory products grows, there is a need for new, more efficient products that meet the needs of the increasing range of applications. The PC28F256P33B85B TR is one such product that is specifically designed to meet the requirements of a wide range of memory-intensive applications. This article will explore the application field and working principle of PC28F256P33B85B TR.

Application Field

The PC28F256P33B85B TR is a 32Mb, dual-die NOR flash memory equipped with asynchronous structure and JEDEC pin-out. It is a high-performance and high-capacity device suitable for space-constrained applications. This device is ideal for the automotive, industrial, medical, and data storage markets. It can also be used for code and data storage in portable applications, TV and STBs products, FPGAs, and System-on-Chip solutions.

The device offers robust protection and flexibility, allowing it to be used in a variety of applications. Built-in security features include AES-128 encryption and authentication to protect user data. Support for 1.8V (VCC1), 3.3V (VCC2), and 1.2V (VCC3) supply voltages makes it suitable for a range of power-sensitive applications. Additionally, the device supports various interfaces, including an 8-bit multiplexed mode, a 16-bit multiplexed mode, and an 8/16-bit non-multiplexed mode. These multiple levels of user configurability enable engineers to design applications that are tailored for specific end-user requirements.

Working Principle

The PC28F256P33B85B TR features a dedicated architecture that is designed to optimize system performance and maximize throughput. The memory is organized into four independent memory cells, with each cell containing 8 Mbits of storage capacity. Each cell operates in an asynchronous mode and can be independently disabled via a software bit. This allows the system to save power when needed by disabling power to only the necessary memory blocks. Additionally, the device supports 8 and 16-bit, non-multiplexed, and 8/16-bit multiplexed bus protocols for maximum flexibility.

The PC28F256P33B85B TR also includes an integrated error-code correction (ECC) engine and an advanced error-code detection engine. The ECC engine guarantees reliable read operation by correcting any detected bit errors. The error-code detection engine provides an extra layer of protection by detecting and flagging any errors that were not corrected by the ECC mechanism. This ensures that all stored data is reliable and uncorrupted.

Furthermore, the device is designed with an integrated high-voltage control circuit and an open-drain output buffer, allowing it to be used in a variety of applications. The high-voltage control circuit can be used to provide additional power to the memory cell, while the open-drain output buffer can be used to produce a logic low-level voltage suitable for many different output types. This allows the device to be used in a wide range of applications.

The PC28F256P33B85B TR is an ideal solution for applications that require a high-performance, high-capacity memory solution. Its wide range of features, including an integrated ECC engine and open-drain output buffer, make it well suited for use in automotive, industrial, medical, and data storage markets. Additionally, the device’s 8/16-bit non-multiplexed and multiplexed bus protocols make it suitable for use in a variety of code and data storage applications.

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