Allicdata Part #: | 497-8294-2-ND |
Manufacturer Part#: |
PD84001 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | FET RF 18V 870MHZ |
More Detail: | RF Mosfet LDMOS 7.5V 50mA 870MHz 15dB 30dBm SOT-89 |
DataSheet: | PD84001 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 870MHz |
Gain: | 15dB |
Voltage - Test: | 7.5V |
Current Rating: | 1.5A |
Noise Figure: | -- |
Current - Test: | 50mA |
Power - Output: | 30dBm |
Voltage - Rated: | 18V |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89 |
Base Part Number: | PD84001 |
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The PD84001 is an RF type field-effect transistor (FET), more specifically a Metal–Oxide–Semiconductor FET (MOSFET). As a type of FET, it is a voltage-controlled solid-state device that acts as a switch or a variable resistor and is used in many applications across a wide range of industries. It is particularly suited for use as a Signal Processing, Amplifier and Audio/Video Device
The main performance characteristics of the PD84001 include:
- Low Power Consumption: The power consumption of the PD84001 is very low. This makes it suitable for use in applications where power savings is of the essence.
- High Frequency Capability: The PD84001 can operate at frequencies up to 1GHz.
- Low Input and Output Impedances: This characteristic is useful when using the device in impedance transforming and matching applications.
- High Breakdown Voltage: The device has a breakdown voltage of up to 10V.
The primary way in which the PD84001 applications is by using its voltage control-signal output and gate-to-drain junction properties in small signal amplification applications. These applications range in the frequency range of 1GHz and below.
The PD84001\'s working principle is quite simple. The device consists of three terminals, gate, drain and source. The gate and source are connected together and the gate is then controlled separately. As voltage is applied to the gate, it induces an electric field in between the source and the gate. This electric field causes electrons from the source to be attracted and repelled from the gate. This creates a channel between the drain and the source and depending on the polarity of the voltage, a varying current will flow between them. This functioning results in the device\'s FET properties, whereby current can be regulated by the input of a voltage.
The PD84001 has many uses described as above, and its low power consumption, high frequency capability, low input and output impedances, as well as its high breakdown voltage, make it particularly suitable for use in impedance matching and signal processing applications. The device is also well suited for use in audio and video applications. Thanks to its low power consumption, it is also suitable to be used in a power conservation context. These features make the PD84001 a popular FET that is found in a wide variety of applications across many industries.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
PD84001 | STMicroelect... | -- | 1000 | FET RF 18V 870MHZRF Mosfe... |
PD84002 | STMicroelect... | 1.48 $ | 1000 | FET RF 25V 870MHZRF Mosfe... |
PD84006L-E | STMicroelect... | -- | 6000 | FET RF 25V 870MHZRF Mosfe... |
PD84008L-E | STMicroelect... | -- | 1000 | FET RF 25V 870MHZRF Mosfe... |
PD84006-E | STMicroelect... | 10.99 $ | 148 | FET RF 25V 870MHZ PWRSO-1... |
PD84010TR-E | STMicroelect... | -- | 1000 | FET RF 40V 870MHZ 10PWRSO... |
PD84010-E | STMicroelect... | 8.44 $ | 1000 | FET RF 40V 870MHZRF Mosfe... |
PD84010S-E | STMicroelect... | 0.0 $ | 1000 | TRANS RF N-CH FET POWERSO... |
PD84008-E | STMicroelect... | -- | 1000 | FET RF 25V 870MHZRF Mosfe... |
PD84008S-E | STMicroelect... | -- | 1000 | TRANS RF N-CH FET POWERSO... |
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