PD84008S-E

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The PD84008S-E is a new type of radio frequency (RF) field-effect transistor (FET) with an enhanced performance. This FET is a single-gate RF transistor that is optimized for use in high power, high frequency applications. It offers superior power handling capabilities, low noise and high switching performance.

The PD84008S-E is a N-channel enhancement-mode transistor, which means that the current flow is increased when a positive voltage is applied to the gate terminal. The FET operates within a range of negative gate threshold voltages, and its maximum drain-source voltage is 400V. This transistor is designed to be used in DC and RF applications, and its operating frequency range is from 3GHz to 18GHz.

The basic principle of operation of the PD84008S-E is that it acts as a variable resistance between the drain and source terminals. The resistance varies with the voltage applied to the gate terminal. As the voltage applied to the gate terminal increases, more current will flow between the drain and source terminals. The maximum current flows when the gate voltage is at its maximum, which is equal to the maximum drain-source voltage.

The PD84008S-E also has a low noise figure, which is important for radio systems. The transistor has a low noise figure of 0.6dB at 10GHz, which provides improved signal-to-noise ratio, and the resulting better performance in radio systems. In addition, the PD84008S-E has an enhanced RF pulse response time, which is important for applications such as radar and electronic warfare.

The PD84008S-E is designed to be used in high power and high frequency applications, such as frequency synthesizers, transmitters, receivers, and amplifiers. It is also suitable for use in low noise and high gain applications. Additionally, the PD84008S-E is suitable for power amplifiers, as its maximum drain-source voltage is 400V.

The PD84008S-E is an ideal device for use in RF applications, as it provides superior power handling capabilities, low noise and high switching performance. It has an enhanced RF pulse response time and a low noise figure, making it suitable for use in many radio applications. The PD84008S-E is an ideal choice for anyone looking for a reliable and high-performance RF FET.

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