PD84010S-E

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PD84010S-E is a type of radio frequency (RF) MOSFET (Metal Oxide Semiconductor Field Effect Transistor) typically used in high frequency applications in the range of 4 to 12 GHz. These types of transistors offer low power for high efficiency, low noise, and high linearity performance. They are widely used by engineers and hobbyists for amplifying and switching signals and for power supply conditioning.

MOSFETs operate on the principle of controlling the flow of electrical current between the source and drain by properly biasing the gate (control) electrode. When the gate is at a high (or positive) voltage, current will flow freely between the source and drain. When the gate is at a low (or zero) voltage, no current will flow. In between, the amount of current flow can be varied, making MOSFETs excellent devices for high frequency processing, amplification and switching/gating.

The PD84010S-E uses a field-oxide-gate process that utilizes a high-grade silicon substrate, screened for good high-frequency performance. This process allows the device to offer a low noise figure, low distortion, and high linearity without requiring any external components. The device is optimized for use in the 4–12 GHz frequency range and can handle up to 400 mW of power.

The PD84010S-E is offered in a small 3-lead surface-mount package for ease of use in space-constrained RF applications. It also comes with a wide range of load impedances and gate biases, allowing the designer to tune the device for optimal performance in any particular system. It is rated for operating temperatures from -55°C to 125°C and can handle a wide range of voltages.

Overall, the PD84010S-E is an excellent choice for anyone looking for a high-performance RF MOSFET for application in high-frequency systems. Its excellent performance, low-power requirements, and wide range of available loads and gate biases make it an attractive option for any system designer.

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