PE43501MLI-Z

Series:	UltraCMOS®, HaRP™
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Attenuation Value:	0dB ~ 7.75dB
Frequency Range:	9kHz ~ 6GHz
Power (Watts):	--
Impedance:	50 Ohms
Package / Case:	32-VFQFN Exposed Pad

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PE43501MLI-Z is an RF signal amplifier, usually being referred to as an attenuator. While being used in various applications, the main purpose and construction of the PE43501MLI-Z are adequately explained in the following discussion.


The PE43501MLI-Z attenuator is typically found in applications that require electrical signal reduction. This could include attenuating harmonics, noise filtering, and power level shifting, particularly in radios and digital communication. Generally, the PE43501MLI-Z attenuator is a good alternative for applications that require some type of amplitude adjustment or control, or to ensure the proper impedance between circuits and devices.


The PE43501MLI-Z attenuator is usually constructed by combining two metal oxide semiconductor field effect transistors (MOSFETs) with a network of resistors. This design allows for better signal-to-noise ratio, improved return loss and better attenuation control when compared to other attenuator designs. The PE43501MLI-Z attenuator comes in two models- the PE43501MLI and the PE43501MLI-Z. The ‘Z’ version of the PE43501MLI utilizes higher performance components and provides superior performance when compared to the ‘MLI’ version.


The working principle behind the PE43501MLI-Z is fairly simple. The two MOSFETs in the design create two separate AC signals. When these two signals mix together, the electrical signal level is decreased. This mechanism, known as a branch-line coupler, is able to change the electrical level of a signal and attenuate RF signals from -20 dB to -128 dB.


All in all, the PE43501MLI-Z is an RF signal amplifier usually referred to as an attenuator. It is typically found in applications that require electrical signal reduction, such as attenuating harmonics, noise filtering, and power level shifting, and works primarily with two metal oxide semiconductor field effect transistors (MOSFETs) combined with a network of resistors. It utilizes a mechanism of branch-line coupling which allows it to change the electrical level of signals and attenuate RF signals from -20 dB to -128 dB.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description