PH1955L,115 Discrete Semiconductor Products |
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Allicdata Part #: | 568-2174-2-ND |
Manufacturer Part#: |
PH1955L,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 55V 40A LFPAK |
More Detail: | N-Channel 55V 40A (Tc) 75W (Tc) Surface Mount LFPA... |
DataSheet: | PH1955L,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1992pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 17.3 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Introduction
The PH1955L,115 is a type of field effect transistor (FET) that helps control the flow of electric current through an electronic circuit. It is a particular type of single FET—an MOSFET (Metal Oxide Semiconductor Field Effect Transistor)—which is one of the three main types of FETs. This particular device is designed for high-frequency applications, with higher input impedance and greater speed than other FETs, making it applicable to a wide range of applications.
Physical Description
The PH1955L,115 is composed of a few essential components, which are all involved in the functioning of the device. There are a source, gate, drain, and substrate connections; the first three of which make up the transistor gate. The source and drain contain terminals used to connect the gate with an external power source or circuit. The substrate contains an insulating layer, which creates an electric field to control current flow.
Working Principle
The working principle of the PH1955L,115 involves the application of a voltage through the gate. This voltage creates an electric field in the substrate, which in turn increases current flow through the transistor gate between the source and drain. When the voltage is increased, the electric field is also increased which results in higher current flow. Infrared light can be used to modify the voltage level, allowing for further control over the current flow.
Application Field
The PH1955L,115 is a particularly useful device for many applications. Its high current flow and high-speed switching capabilities make it perfect for high-frequency RF applications, such as radio and television. It can also be used in power supplies, amplifiers, and logic gates. As it has a particularly low on-resistance, it is also particularly useful as an actuator in robotic systems.
Conclusion
The PH1955L,115 is a highly efficient and reliable single MOSFET device. It is especially well-suited for high-frequency RF applications, with its high input impedance and speed. It can also be used in a variety of other applications, such as power supplies, amplifiers and logic gates, making it a versatile addition to any electronic system. Its efficient operation and comprehensive features make the PH1955L,115 the perfect choice for your next electronic project.
The specific data is subject to PDF, and the above content is for reference
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