PH3330L,115

PH3330L,115 Application Field and Working Principle

The PH3330L, 115 is a high-speed, high-voltage, reverse-gate protection insulated-gate bipolar transistor (IGBT) module, specifically designed for power switching applications. It is manufactured by Powerex Inc., a leading provider of power semiconductor solutions. As a high-voltage, high-speed switching solution, PH3330L,115 uses an innovative structure and process to provide superior performance and reliability compared to more standard devices.

The PH3330L, 115 is used in a variety of applications including AC/DC converters, motor drives, UPS systems, renewable energy sources, and high-voltage rectifiers. It is also ideal for low-voltage and high speed motor control applications. The device is designed to work with standard IGBTs and other modules.

The PH3330L, 115 features a reverse-gate reverse body protection to resist short-term overvoltage and high dV/dt conditions for improved reliability and durability. It is also enclosed with a unique welding edge overhanging surface mount processes for effective insulation and increased safety. This device is compliant with the RoHS Directive and is available with an operating temperature range from -40°C to +100°C.

The PH3330L, 115 is constructed from an N-type silicon substrate which contains multiple p-type zones. These zones become active when the transistor is switched on and so form the active channel. The control gate of the device is connected to a voltage source which switches the device on, thus allowing electric current to pass through. The other two terminals, the drain and source, provide the electrical contact to the substrate. The reverse gate reverse body protection provides excellent thermal and electrical protection to the device.

The PH3330L, 115 allows high-side and low-side drive capability, enabling its use in applications such as pulse-width modulated (PWM) motor control circuits. It is optimized for start/stop, direction, speed and current control. Additionally, the device includes a unique folding process for the gate structure, providing superior avalanche energy and excellent transistor longevity, combined with resistance to electrostatic discharge. The device also features die-level EMI protection, enabling it to be used in applications where low electromagnetic interference is desired.

The PH3330L, 115 is an ideal choice for a wide range of applications due to its high-speed, high voltage operation and excellent reliability. It provides optimized and cost-effective solutions for power switching applications, making it an ideal choice for a wide range of applications.