PH3830L,115 Allicdata Electronics

PH3830L,115 Discrete Semiconductor Products

Allicdata Part #:

568-2346-2-ND

Manufacturer Part#:

PH3830L,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH 30V 98A LFPAK
More Detail: N-Channel 30V 98A (Tc) 62.5W (Tc) Surface Mount LF...
DataSheet: PH3830L,115 datasheetPH3830L,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3190pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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PH3830L,115 is one of the many types of field effect transistors (FETs) available in the market today. It was designed to be used in a wide range of application areas as well as to provide precise voltage control and current amplification. This article will discuss in detail the application field and the working principle of the PH3830L,115.

PH3830L,115 Applications

The PH3830L,115 FET is used in a variety of applications such as amplifiers, power switches and synchronous rectifiers. It can be used to construct circuits such as DC/DC converters and gate drivers. The wide range of applications for this particular FET makes it a popular choice for many engineers.

The FET also has an excellent power dissipation and insulation capability. This makes it perfect for use in systems where current needs to be kept in check. It is also good for isolating signals from one circuit to the next, thus reducing noise. When it comes to switching, the PH3830L,115 FET can be used to control the voltage and current, resulting in reliable and accurate power supply.

In addition to being used in amplifiers and power switches, the PH3830L,115 FET is also used in RF systems. Its wideband capability makes it ideal for use in amplifiers and radio transceivers. Furthermore, its high switching speed and low-resistance lead makes it suitable for use in many different types of system.

PH3830L,115 Working Principle

The PH3830L,115 FET works by using an insulated gate to control the current flow between the source and the drain. The voltage applied to the gate will determine how much current flows between the drain and the source. When the gate voltage is positive, the current flows from the source to the drain, otherwise it flows from drain to source.

The FET is also useful for amplifying signals. When a small signal is applied to the gate, it will control the amount of current flowing between the source and the drain. This allows for precise control over the output signal.

The PH3830L,115 FET is built in such a way that it has a low-voltage threshold and low-current consumption. This makes it suitable for many power applications, where power consumption needs to be kept low. Furthermore, the FET has a wide input voltage range, making it ideal for applications requiring a precise and wide input voltage range.

Conclusion

The PH3830L,115 FET is a popular choice for many types of applications due to its wide range of applications and its excellent performance characteristics. Its wide electrical characteristics combined with its high power dissipation capability makes it ideal for many types of power applications. Furthermore, its insulated gate ensures accurate voltage control and current amplification. This makes it an ideal choice for designs requiring precise control over the output signal.

The specific data is subject to PDF, and the above content is for reference

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