PH4330L,115

Vgs(th) (Max) @ Id:	2.5V @ 1mA
Package / Case:	SC-100, SOT-669, 4-LFPAK
Supplier Device Package:	LFPAK56, Power-SO8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	62.5W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2786pF @ 12V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	22.9nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	4.3 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	95.9A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The PH4330L,115 is a single, insulated-gate, field-effect transistor (IGFET) that utilizes a metal/oxide semiconductor structure. It operates in a common source configuration, meaning that the signal applied to the gate is transferred to the drain. The insulated gate to the semiconductor allows control of the electron flow from the source to the drain, making it an ideal component for signal processing applications.The PH4330L,115 is the latest in a series of transistors based on the MOSFET, or metal-oxide-semiconductor field-effect transistor. MOSFETs use transistors that are based on the physical law of MOS. This law states that a voltage (Vgs) applied to a MOSFET\'s gate will affect the current conduction from its source to its drain.The PH4330L,115 has a voltage rating of 45 volts, a power rating of 30 watts, and an on-resistance (RON) of 0.41 ohms. It is designed to provide a high degree of control over current and voltage by reducing the resistance of the connection between source and drain. The PH4330L,115 also has a very low input capacitance and is designed to offer a high level of linearity, making it ideal for applications requiring precision signal processing.The PH4330L,115 is mainly used to control analog signals in electronic equipment such as cell phone towers and base stations. When used in a base station, the transistor is responsible for controlling the output power of the base station. This allows for more efficient power management and control over the signal output of the base station.In addition to base station applications, the PH4330L,115 is also used in cell phone towers to control the signal strength of each separate antenna. This allows for more efficient power management and better coverage for regions far from the cell phone tower.The PH4330L,115 is also used in satellite communication systems for controlling the transmission of signals between two or more satellites. By using the PH4330L,115, the satellite operators can ensure that the satellite signals are transmitted with the highest available signal to noise ratio.The PH4330L,115 is also well-suited for use in automotive electronics. For example, it can be used in the engine control modules of cars to control the fuel injectors which help to regulate the amount of fuel injected into the engine. This helps to ensure an optimal level of fuel efficiency and engine performance.In summary, the PH4330L,115 is a single, insulated-gate, field-effect transistor (IGFET) which utilizes a metal/oxide semiconductor structure. It operates in a common source configuration and is typically used in applications requiring precise control of current and voltage. It is commonly used for controlling analog signals in electronic equipment such as cell phone towers and base station, satellite communication systems, and automotive electronics.

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