PH4530L,115 Allicdata Electronics

PH4530L,115 Discrete Semiconductor Products

Allicdata Part #:

568-2179-2-ND

Manufacturer Part#:

PH4530L,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH 30V 80A LFPAK
More Detail: N-Channel 30V 80A (Tc) 62.5W (Tc) Surface Mount LF...
DataSheet: PH4530L,115 datasheetPH4530L,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1972pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 5V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The PH4530L,115 is a type of a Field Effect Transistor (FET). It belongs to the family of Single MOSFETs; a type of bipolar transistor, which is composed of two material layers, with one containing a single N-Type region and the other containing a single P-Type region. FETs are used in the electronics industry to regulate the current flow in devices, as they operate according to the principle of the electric field effect.

In a PH4530L,115 FET, current is transferred from the source to the drain by the physical movement of electrons. This movement is prompted by a voltage that is applied to the gate. When the gate is positively charged, electrons move from the source to the drain. Conversely, when the gate is negatively charged, electrons move from the drain back to the source.

The PH4530L,115 FET is mainly distinguished by its drain-to-source breakdown voltage (VDS) rating which is usually quoted as the saturation voltage. This value is usually used to determine the maximum voltage which can be applied to the electrical circuit without the junction failing. Some of the other key performance parameters of the PH4530L,115 FET include switching time (tRA and tFA), on-state drain current (ID) and gate-source voltage (VGS).

The PH4530L,115 FET finds wide application in automotive, industrial, medical and consumer electronics. It is commonly used in power supplies, voltage regulators, switches, amplifiers, motor drivers, pre-amplifiers, power amplifiers and heated resistors. The PH4530L,115 can also be used for high power switching such as motor control, HVAC and lighting.

In automotive applications, the PH4530L,115 can be used to control the power supply to an electric motor, as it can handle higher current and is able to switch on or off rapidly. It can also be employed to regulate the flow of power in streetlights to prevent excessive energy consumption and wastage. In consumer electronics, it can be utilized in voltage regulator circuits, which are used to regulate the supply of electricity and optimize the performance of the device.

In the medical field, the PH4530L,115 is mainly employed in medical imaging equipment, such as X-ray machines. The FET is used to control the high voltage in X-ray machines, enabling them to operate accurately and safely. Similarly, it is also employed in medical electronics such as glucose and blood pressure monitors, providing an efficient and reliable way of controlling the flow of current.

The PH4530L,115 is an incredibly versatile type of FET, offering a wide range of potential applications. Its superior power handling capability, coupled with excellent switching speed and voltage regulating capacity, ensures that it is well suited for a variety of different applications, from automotive to medical.

The specific data is subject to PDF, and the above content is for reference

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