Allicdata Part #: | PH4830L,115-ND |
Manufacturer Part#: |
PH4830L,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 30V 84A LFPAK |
More Detail: | N-Channel 30V 84A (Tc) 62.5W (Tc) Surface Mount LF... |
DataSheet: | PH4830L,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 62.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2786pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22.9nC @ 4.5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 4.8 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 84A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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PH4830L,115 is a high performance power integral field effect transistor (FET), also known as a metal oxide semiconductor field effect transistor (MOSFET). This device can be used for applications such as motor drives, HVAC (heating, ventilation, and air conditioning) control, industrial and general-purpose power control, and other high- and low-side current or voltage switching applications.
The PH4830L,115 is a single device that can be used as a single N-channel FET or as an N-channel FET with an integrated N-channel bootstrap MOSFET. It features a low on-resistance of 8 mΩ, which enables it to be used in power switching applications with up to 400W of power. Additionally, it has a high voltage breakdown rating of 600V, making it suitable for use in high-power switching applications. This device also has a low gate trigger voltage of 6.5V, meaning it can be easily controlled with a microcontroller.
The PH4830L,115 utilizes an on-board pmos transistor (M1) to provide the bootstrap voltage. When the voltage is applied to the gate of the nmos device, the pmos device turns on and supplies the bootstrap voltage to the gate of the nmos device, which increases the gate to source voltage beyond the normal limit of the gate driver. This allows the nmos device to be switched on and off at a much higher voltage than normal, enabling higher load current switching. Additionally, the integrated pmos device allows the user to control the gate voltage of the nmos device independently, allowing each nmos device to be controlled separately.
The PH4830L,115 also features an integrated output current monitor circuit. This circuit allows the user to monitor the current flowing through the device and provides a visual indication of the current using an LED. This feature is useful for applications that require current monitoring, such as motor control or motor drive applications. Additionally, this device includes a high side driver, which allows the user to control the FET with a higher gate voltage, compared to an ordinary FET.
Due to its high performance characteristics, the PH4830L,115 is suitable for applications involving high power switching, motor drive, and HVAC control. The integrated high side driver, current monitor circuit, and low gate voltage make this device ideal for use in power switching applications, where the gate voltage needs to be heavily controlled. Additionally, the high voltage breakdown rating makes it suitable for applications involving large load currents, such as motor drive applications. The PH4830L,115 is a highly versatile device that can be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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