Allicdata Part #: | PH5525L,115-ND |
Manufacturer Part#: |
PH5525L,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 25V 81.7A LFPAK |
More Detail: | N-Channel 25V 81.7A (Tc) 62.5W (Tc) Surface Mount ... |
DataSheet: | PH5525L,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 62.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16.6nC @ 4.5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 81.7A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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The PH5525L,115 is a type of Field-effect transistor (FET) specifically a Metal-oxide-semiconductor field-effect transistor (MOSFET) that is a single device. The PH5525L,115 has a wide range of applications and is used in all kinds of settings, from commercial and industrial applications to consumer electronics.The PH5525L,115 works by the effects of voltage differences on a channel of conducting material located between the source electrode and the drain electrode. In order to induce a current, a voltage is applied across the gate-source junction which causes a depletion layer to form in the channel which effectively increases the resistance of the channel and thus reduces the current that can flow through it. The resistance of the channel can also be adjusted by changing the voltage through the gate-drain junction, thus allowing for the precise current control that is essential in many modern electronic circuits.The PH5525L,115 is an enhancement type MOSFET, and provides the most efficient current control for those applications requiring low gate threshold voltage and low input capacitance. It is especially useful for digital circuits, such as logic gates and flip-flops, which require reliable high-speed switching with low propagation delay.Another application where the PH5525L,115 is often used is in power supplies, where it can be used as a MOSFET switch for high-power circuits. In this application, the MOSFET is used as an on/off switch in conjunction with other high-powered power components, allowing for precision control of power delivery while preventing large losses in current.The PH5525L,115 is also commonly used as a low-side switch in switchmode power supplies. In this application, the MOSFET is used to switch the motor voltage of the system, providing a more efficient and reliable solution than other alternatives.Finally, the PH5525L,115 can also be used in high-frequency amplifiers, such as those used in radio broadcast equipment. The MOSFET\'s low gate capacitance makes it an ideal choice for RF amplifiers, as it provides a low signal-to-noise ratio which is essential for high-fidelity audio reproduction.In conclusion, the PH5525L,115 is a versatile single MOSFET which can be used in a wide variety of applications. With its reliable low gate threshold voltage, low input capacitance and efficient current control, it is an ideal choice for everything from digital circuits to high-frequency amplifiers.The specific data is subject to PDF, and the above content is for reference
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