PH6030AL,115

Vgs(th) (Max) @ Id:	2.15V @ 1mA
Package / Case:	SC-100, SOT-669, 4-LFPAK
Supplier Device Package:	LFPAK56, Power-SO8
Mounting Type:	Surface Mount
Operating Temperature:	--
Power Dissipation (Max):	--
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1425pF @ 12V
Gate Charge (Qg) (Max) @ Vgs:	24nC @ 10V
Series:	TrenchMOS™
Rds On (Max) @ Id, Vgs:	6 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C:	79A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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PH6030AL,115 is a single field-effect transistor (FET) with an N-channel enhancement mode. It is offered in the SOT-23 plastic package in order to save board space. This transistor is applicable in circuit design, signal processing, analog and digital applications. It is particularly useful in signal handling applications where fast switching speed is required.The PH6030AL,115 is protected against electrostatic discharges (ESDs) due to its integrated ESD protection circuit. This device is manufactured using advanced complementary metal-oxide-silicon (CMOS) processes. It has an ultra-low on-state resistance and high-current switching capability. It also has a low-noise operation and low gate-source capacitance.The field-effect transistor (FET) is a three-terminal semiconductor device. It is composed of a gate which is insulated from a channel by a thin layer of gate oxide, which is further separated from the source and drain regions by a thin insulator. The FET works by controlling the flow of electrical current between the source and drain regions. When a voltage is applied across the gate and source terminals, the electric field generated between the gate and drain controls the flow of current in the channel.The devices are often categorized based on the field-effect transistor structure and working principle. The gate-source voltage (V GS) controls the conductivity of the channel. In the case of the PH6030AL,115, the FET is an N-channel enhancement FET which is controlled using voltage. This voltage increases with the source voltage and this, in turn, increases the conductivity of the channel.The PH6030AL,115 is a single field-effect transistor (FET). It is a low resistance N-channel device and is used in a wide range of applications where a high level of reliability is required. It is designed for use in signal handling applications, where fast switching speed is important. This device is designed for operation in both high and low voltage environments. It is capable of operating from -55°C to +150°C operating temperature range and is available in the SOT-23 plastic package, offering board-space savings.The PH6030AL,115 is protected against ESDs due to its integrated protection circuit. It has an ultra-low on-state resistance, suitable for high-current switching applications. Furthermore, it provides low noise and low gate-source capacitance. This device is used in circuit design, signal processing, analog and digital applications. It is commonly used in various systems such as medical equipment, computer and telecommunications equipment, automotive and consumer electronics applications.The PH6030AL,115 is an N-channel enhancement field-effect transistor. It utilizes an applied voltage at the gate to control the current flow between the source and the drain terminals. It is constructed using advanced CMOS processes and is capable of operating in both high and low-voltage environments. It is an ideal device for signal handling applications where fast switching speed is necessary. The device is protected against ESDs due to its integrated protection circuit and offers good noise performance and low gate-source capacitance.

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