PH6530AL,115 Discrete Semiconductor Products |
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Allicdata Part #: | 568-7366-2-ND |
Manufacturer Part#: |
PH6530AL,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 30V LFPAK |
More Detail: | N-Channel 30V Surface Mount LFPAK56, Power-SO8 |
DataSheet: | PH6530AL,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | LFPAK56, Power-SO8 |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
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Introduction
The PH6530AL,115 is an enhancement-mode, N-channel metal-oxide-semiconductor field-effect transistor (MOSFET). This MOSFET is manufactured using high voltage, high density, ultrathin processes, resulting in a device that is ideally suited for use in high power switching applications. The PH6530AL,115 also has ultra-high input impedance and low on-resistance characteristics, making it highly desirable in many high frequency switching applications.
Applications
The PH6530AL,115 MOSFET is used in a wide variety of high power switching applications. It is most commonly seen in high power audio amplifiers and drivers, such as in professional-grade audio equipment, but can also be found in many power management applications such as solar inverters, high voltage DC power supplies, and motor controllers. This MOSFET is also widely used in high frequency switching applications, such as in radio frequency power amplifiers, as well as in battery powered applications.
Working Principle
The PH6530AL,115 MOSFET is based on the principle of electron motion between two electronic conduction layers. The principle of the device is quite simple. The active region of the MOSFET is formed by a thin semiconductor layer called the channel. When a gate voltage is applied, it creates an electric field in the channel which attracts free electrons, or holes, to create a flow of current through the device. The current flow is controlled by the gate voltage, allowing the device to be used to switch large currents with a very small input signal.
Characteristics
The PH6530AL,115 has a very high maximum drain-source voltage of 55V, along with an operating temperature range of -55°C to +150°C. This makes the device suitable for a wide range of operation parameters and conditions. The device also has a very low on-resistance of just 0.0205 Ω, making it very efficient at conducting large amounts of current. Furthermore, the device has a very low gate threshold voltage of just 0.3V, making it ideal for use in low voltage applications.
Conclusion
The PH6530AL,115 is an enhancement-mode, N-channel MOSFET ideally suited for use in high power switching applications. With its ultra-high input impedance and low on-resistance characteristics, as well as its wide operating temperature range, this MOSFET makes an ideal choice for many high power switching applications. Whether it is used in an audio amplifier, a DC power supply, or a motor controller, this MOSFET is sure to provide reliable performance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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