Allicdata Part #: | PH7030AL,115-ND |
Manufacturer Part#: |
PH7030AL,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 76A LFPAK |
More Detail: | N-Channel 30V 76A (Tc) Surface Mount LFPAK56, Pow... |
DataSheet: | PH7030AL,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1270pF @ 12V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 15A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 76A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A PH7030AL,115 is a type of field-effect transistor (FET) and is part of the MOSFET family of transistors. This device is also known as an enhancement-type FET, which is a junction transistor specially designed to amplify signals. In addition, the PH7030AL,115 is a single channel FET with a voltage rating. This type of FET is generally used in consumer electronics, automotive electronics, medical electronics, and other related applications. The following sections will discuss the application field and working principle of the PH7030AL,115.
Application Field
The PH7030AL,115 is suitable for various applications in consumer and automotive electronics. Due to its ability to amplify signals, this type of FET can be used for signal amplification of audio signals in consumer electronics. Moreover, it can be used for signal switching and control in automotive electronic devices such as power windows, car alarms, and other related applications. Additionally, this type of FET can be used for signal switching and amplification in medical electronics like medical instruments. All of these applications require the PH7030AL,115 to be both able to switch and amplify signals.
Working Principle
The PH7030AL,115 is a junction transistor made of an insulated gate and doped regions formed on a single piece of semiconductor material. It consists of four different regions: the drain, the source, the gate, and the substrate. A voltage potential is applied to the substrate and gate, which creates an electric field in the substrate and between the gate and the drain and source. Depending on the type of FET, this electric field can either attract or repel carriers from the source to the drain. In the case of the PH7030AL,115, this is an enhancement-type FET, and the electric field attracts electrons from the source to the drain.
As the electrical field increases, more electrons flow from the source to the drain, hence increasing the current. This in turn amplifies the applied voltage and can be used to switch and control specific applications. The PH7030AL,115 also has a breakdown voltage, which is the voltage at which the FET will breakdown and become non-operable. It is important to keep the applied voltage below this level in order to increase the longevity of the FET.
Conclusion
The PH7030AL,115 is a type of FET and is part of the MOSFET family of transistors. This FET is designed for signal amplification and switching applications in consumer electronics, automotive electronics, and medical electronics. The PH7030AL,115 is an enhancement-type FET, meaning that the electric field between the source and the drain attracts carriers. The increase of electric field amplifies the applied voltage, allowing the FET to both amplify and switch signals. Lastly, the breakdown voltage is an important factor to take into account when using this FET, as it is the maximum voltage at which it will still be operational.
The specific data is subject to PDF, and the above content is for reference
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