PH7030L,115 Allicdata Electronics

PH7030L,115 Discrete Semiconductor Products

Allicdata Part #:

568-2349-2-ND

Manufacturer Part#:

PH7030L,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH 30V 68A LFPAK
More Detail: N-Channel 30V 68A (Tc) 62.5W (Tc) Surface Mount LF...
DataSheet: PH7030L,115 datasheetPH7030L,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The PH7030L,115 is a single field-effect transistor (FET) used for many different applications. It is a type of MOSFET (metal–oxide–semiconductor field-effect transistor). This device can be used as an amplifier, switch, or power module in a variety of electronic equipment and circuits. Because of its simple structure and relatively low cost, the PH7030L,115 is often used as the primary component in various consumer products.

The PH7030L,115 is characterized by its drain–source voltage (VDS) of 70 volts, a breakdown voltage of 160 volts, an on-state resistance of 0.45 ohms, and an off-state capacitance of 18 pF. It is an N-channel enhancement-mode MOSFET, which means it is normally off and needs a gate–source voltage (VGS) of 10 volts to be turned on. Furthermore, the operating temperature for this device is −55 °C to 175 °C.

The PH7030L,115 is ideal for low-power switching applications that require a high degree of control over power consumption. It is often used in products such as photocopiers, printers, and switching power supplies.

The basic working principle of the PH7030L,115 is as follows. When a gate–source voltage (VGS) is applied to the gate, the channel between the source and the drain begins to conduct, thus permitting current to flow. The current flowing through the channel is the drain current (ID). As the voltage applied to the gate increases, the current flowing through the channel increases, allowing more power to flow.

The PH7030L,115 has several advantages over other types of transistors. For example, the gate–source voltage (VGS) does not need to be controlled as precisely as with other types of transistors. This allows for the use of less expensive control devices, making the PH7030L,115 an ideal choice for cost-conscious applications. Additionally, because the PH7030L,115 is an N-channel device, it is able to operate at higher voltages than other types of transistors.

The PH7030L,115 also has a high on-state resistance, meaning it dissipates less power and produces less heat, making it ideal for energy-conscious applications. In addition, the PH7030L,115 has a very low input capacitance, meaning it can switch quickly, making it suitable for high-speed switching applications.

In conclusion, the PH7030L,115 is a very versatile device, and is suitable for a wide variety of applications. It is characterized by its drain–source voltage (VDS) of 70 volts, a breakdown voltage of 160 volts, an on-state resistance of 0.45 ohms, and an off-state capacitance of 18 pF. It can be used for low-power switching applications that require a high degree of control over power consumption. The PH7030L,115 offers many advantages over other transistor types, such as its low gate–source voltage requirement and stable performance. With its versatility and cost savings, the PH7030L,115 should be considered for many types of electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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