Allicdata Part #: | PH9030AL,115-ND |
Manufacturer Part#: |
PH9030AL,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 30V 61A LFPAK |
More Detail: | N-Channel 30V 61A (Tc) Surface Mount LFPAK56, Pow... |
DataSheet: | PH9030AL,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 61A (Tc) |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 17.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1006pF @ 12V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | LFPAK56, Power-SO8 |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
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The PH9030AL,115 is a single P-Channel Feild-Effect transistor (FET) used in a wide range of applications. The PH9030AL,115 is manufactured to extend the performance of today’s advanced design circuitry.
The main applications of the PH9030AL,115 are automotive and aerospace, DC to DC converters, and power management circuits. The PH9030AL,115 is also used for power distribution, memory, and microprocessor circuitry.
The PH9030AL,115 is a 2.5V-3.3V, Small-Signal, MOSFET. It has a low-Rds(on), high-speed switching performance, allowing for efficient power delivery and low power consumption. The PH9030AL,115 has an optimized gate-threshold voltage that ensures low noise and distortion, providing excellent power-saving efficiency.
Working Principle
The PH9030AL,115 works by allowing a switching action to be controlled through the gate voltage. In operation, when the gate voltage is applied the P-channel allows a current to flow. If the gate voltage is removed, the FET will turn off. The ability to control the current flowing through the FET is referred to as the “on-off ratio” and is measured as the “Rds(on)”.
The PH9030AL,115 is designed for low-loss, low-noise, and high-speed operation. It has an internal threshold voltage of 2.5V, meaning that there must be a minimum of 2.5V between the gate and source voltages for the device to become ON. It has a maximum gate-source voltage of -7V which helps to reduce EMI due to its low resistance.
The PH9030AL,115 can handle high-current loads up to 5A and a maximum switching frequency of 5MHz. It also has integrated protection features, including a soft-start protection diode, reverse-current protection, and a temperature-sensing diode.
The PH9030AL,115 offers power efficiency of 300V @ 25A, making it ideal for high-current applications such as automotive and aerospace. It also has a low dynamic on-resistance (Rds(on)) which helps reduce conduction losses, enabling high-frequency switching.
Conclusion
The PH9030AL,115 is a single P-Channel Feild-Effect Transistor (FET) designed for low-loss, low-noise, and high-speed operation. It is used in a wide range of applications, ranging from automotive and aerospace to power management circuits. The PH9030AL,115 has a low-Rds(on), high-speed switching performance, and integrated protection features, making it ideal for high-current applications. This FET offers power efficiency of 300V @ 25A and has a low dynamic on-resistance (Rds(on)) which helps reduce conduction losses.
The specific data is subject to PDF, and the above content is for reference
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