| Allicdata Part #: | PHK28NQ03LT,518-ND |
| Manufacturer Part#: |
PHK28NQ03LT,518 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | MOSFET N-CH 30V 23.7A 8SOIC |
| More Detail: | N-Channel 30V 23.7A (Tc) 6.25W (Tc) Surface Mount ... |
| DataSheet: |  PHK28NQ03LT,518 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 6.25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2800pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 30.3nC @ 4.5V |
| Series: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 14A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 23.7A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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PHK28NQ03LT, 518 Application Field and Working Principle
PHK28NQ03LT, 518 is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) together with the current level N-channel enhancement mode MOSFETs made by ROHM Semiconductor. This type of MOSFET has the maximum drain source voltage of 18V and the maximum drain current of 28A.
Application Field
PHK28NQ03LT, 518 is mainly used for the power switches in the LCD-TV, PC, home appliances and other devices. For example, with the rational design of the MOSFET, the switching time can be minimized and this is beneficial for the reduction of the power loss. Also, it can be used as a switch in DC/DC converters.
Working Principle
MOSFET is the abbreviation of Metal Oxide Semiconductor Field Effect Transistor and it is a type of transistor that makes use of an electric field to control the current between the drain and the source. The function of the MOSFET can be attributed to the three terminals, namely the gate, drain and source. The most common type of MOSFET is the N-type, which refers to the majority carriers.
In PHK28NQ03LT, 518 the MOSFET can be regarded as two p-n junction diodes connected back-to-back, while the gate is a newly introduced terminal in between the two diodes. When the gate voltage is lower than the threshold voltage, the channel between the source and the drain becomes disabled and no current will flow from the drain to the source. On the other hand, when the gate voltage exceeds the threshold voltage, the channel between the source and the drain will be formed and current will be allowed to flow from the source to the drain.
The fact that the current is controlled by the gate voltage makes it advantageous for power switches and the control of DC/DC converters. This type of MOSFET has the feature of low On-resistance and high switching speed, which make it possible for the power dissipation to be reduced.
The specific data is subject to PDF, and the above content is for reference
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