PHP45NQ10T,127 Allicdata Electronics
Allicdata Part #:

1727-4649-ND

Manufacturer Part#:

PHP45NQ10T,127

Price: $ 1.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 100V 47A TO220AB
More Detail: N-Channel 100V 47A (Tc) 150W (Tc) Through Hole TO-...
DataSheet: PHP45NQ10T,127 datasheetPHP45NQ10T,127 Datasheet/PDF
Quantity: 2762
1 +: $ 1.16550
50 +: $ 0.94185
100 +: $ 0.84767
500 +: $ 0.65930
1000 +: $ 0.54627
Stock 2762Can Ship Immediately
$ 1.29
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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PHP45NQ10T,127 is a single type of field effect transistor (FET). The main advantage of using an FET is the high input impedance, which enables the transistor to operate at high frequencies, making it suitable for switching and amplifying high frequency signals. The PHP45NQ10T, 127 is a type of MOSFET, which stands for metal-oxide-semiconductor field-effect-transistors. It has a P-type channel, meaning that current can flow when the gate voltage is greater than the source voltage. It has a breakdown voltage of 45 volts and a maximum power dissipation of 10 watts, making it suitable for many applications.

The PHP45NQ10T,127 FET is often used as a voltage-controlled device in circuits and as a driver in power electronics, such as motor control and light dimming. It can also be used as an amplifier; with a high input impedance, the device can be used to amplify different types of signals. It is also used in switching and power-supply applications; due to its low thermal resistance and high breakdown voltage, it is ideal for high-power circuits and can be used to switch large currents. The FET also finds uses in RF (radio frequency) circuits, where it can be used to amplify or switch signals at high frequencies.

The working principle of the PHP45NQ10T, 127 FET is based on the behavior of an insulated gate oxide layer, the gate oxide layer acts as a capacitor, allowing current to flow in the presence of a voltage applied to the gate (source). The amount of current that can flow through the FET is dependent on the gate voltage and is proportional to it; the higher the source voltage, the higher the gate voltage, which results in a higher current flow. The FET also has a breakdown voltage, which is the threshold beyond which the current flow is unable to increase and the FET is damaged.

Overall, the PHP45NQ10T, 127 is a widely used FET and has many applications. Its high input impedance, low thermal resistance and high breakdown voltage make it suitable for a range of applications, including amplifiers, switching, power supplies and RF circuits.

The specific data is subject to PDF, and the above content is for reference

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