PHP45NQ11T,127 Allicdata Electronics
Allicdata Part #:

1727-4650-ND

Manufacturer Part#:

PHP45NQ11T,127

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 105V 47A TO220AB
More Detail: N-Channel 105V 47A (Tc) 150W (Tc) Through Hole TO-...
DataSheet: PHP45NQ11T,127 datasheetPHP45NQ11T,127 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: TrenchMOS™
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 105V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2930pF @ 25V
FET Feature: --
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Description

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A PH45NQ11T transistor is a type of field effect transistor (FET), which is an active semiconductor device that can modulate and control electric signals. The PH45NQ11T is a N-channel depletion mode MOSFET with a strong source-drain breakdown voltage. This type of transistor has a wide range of applications, including audio-frequency switching circuits, amplifier circuits, power regulator circuits and logic circuits.

Working Principle

A field effect transistor (FET) works by using electrical force to control electric current. The PH45NQ11T MOSFET, like all other FETs, has two terminals, the Gate and the Source. The Source is connected to the ground potential, and the Gate voltage is the controlling factor. When the Gate voltage is higher than the Source voltage, current is allowed to pass through the MOSFET, and when the Gate voltage is lower than the Source voltage, current is cut off. This is known as the Depletion mode of operation.

The PH45NQ11T MOSFET also has a Drain terminal, which is used to control the flow of current. When the Gate voltage is higher than the Drain voltage, current can flow through the MOSFET, and when the Gate voltage is lower than the Drain voltage, the current is cut off. This is known as the Enhancement mode of operation.

Parameters and Specifications

The PH45NQ11T MOSFET has a strong source-drain breakdown voltage of 300 volts, with an on-resistance of 0.37 ohms. It also has a maximum drain current of 15 A, a maximum drain-source voltage of 30 V and a maximum gate-source voltage of ±20 V. The power dissipation of this type of transistor is 28 W and its operating temperature range is between -55°C to 150°C.

Applications

The PH45NQ11T MOSFET has a wide range of applications, some of which include:

  • Audio-frequency switching circuits
  • Amplifier circuits
  • Power regulator circuits
  • Logic circuits
  • Motor control circuits

The PH45NQ11T MOSFET is also ideal for use in high voltage power supplies, battery chargers, and power supply converters. Due to its low on-resistance and low gate-source capacitance, it can be used as a low-power loss switch in high frequency circuits.

Conclusion

The PH45NQ11T MOSFET is a single, N-channel depletion mode field effect transistor, with a strong source-drain breakdown voltage. This type of transistor has a wide range of applications, including audio-frequency switching circuits, amplifier circuits, power regulator circuits and logic circuits, and is ideal for use in high voltage power supplies, battery chargers, and power supply converters. As such, the PH45NQ11T MOSFET is a great choice for those looking for a versatile and reliable switching device.

The specific data is subject to PDF, and the above content is for reference

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