PHT4NQ10T,135 Discrete Semiconductor Products

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The PHT4NQ10T,135 FET ("Field-Effect Transistor") is a single, N-channel-enhancement-mode MOSFET ("Metal-Oxide-Semiconductor Field-Effect Transistor") device. It is used to control the flow of current or voltage in various electrical systems, acting as a switch or amplifier. It is typically used in low- to medium-power applications such as DC-to-DC power conversion, power switch mode, and power amplifiers.

This PHT4NQ10T,135 MOSFET device is a discrete, compact power transistor designed for high-speed, high-efficiency power management applications. The device features a low on-resistance, low Q g and Fast switching performance. It also features thermal, electrical, and mechanical ruggedness that makes it suitable for a wide range of applications. The device is available in two package types: an SO-8 qualified plastic surface mount package, and a TO-247 qualified plastic surface mount package.

The PHT4NQ10T, 135 FET is a voltage-controlled device which operates by using the electric field produced by applied voltage to regulate the flow of current. It contains an insulated gate which controls the width of a conducting channel between two ohmic contacts (source and drain). It has a low power dissipation and is able to handle large currents. Its normally open state is achieved when a small amount of current is fed to the gate of the device.

The PHT4NQ10T, 135 FET can be used in an array of applications such as automotive, DC-DC converters, audio power amplifiers, personal computers, and some telecom applications. This transistor works well as a switch to control the flow of large currents, and as an amplifier to amplify low current signals. It can also be used as an adjustable current regulator, controlling the amount of current that is transferred from the power source. The device is also capable of controlling the voltage: it allows for the voltage drop that occurs when current passes through the device.

When this transistor is used as a switch, the source is used to provide the gate voltage, while the drain is used to conduct the current when the gate voltage is applied. When used as an amplifier, the source voltage is applied to the gate and the drain is connected to the source so that the source current is amplified or increased. The gate voltage is used to determine how much current is allowed to pass through the device.

The PHT4NQ10T, 135 FET is a versatile transistor that can be used for a variety of applications. It has a fast switching speed, low power dissipation and is able to handle large currents, making it suitable for a variety of applications. It is a cost-effective solution for controlling current or voltage in electrical systems.

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