PHT4NQ10LT,135 Discrete Semiconductor Products |
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| Allicdata Part #: | 568-6758-2-ND |
| Manufacturer Part#: |
PHT4NQ10LT,135 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | MOSFET N-CH 100V 3.5A SC73 |
| More Detail: | N-Channel 100V 3.5A (Tc) 6.9W (Tc) Surface Mount S... |
| DataSheet: |  PHT4NQ10LT,135 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Package / Case: | TO-261-4, TO-261AA |
| Supplier Device Package: | SOT-223 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 6.9W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 374pF @ 25V |
| Vgs (Max): | ±16V |
| Gate Charge (Qg) (Max) @ Vgs: | 12.2nC @ 5V |
| Series: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 250 mOhm @ 1.75A, 5V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Current - Continuous Drain (Id) @ 25°C: | 3.5A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The PHT4NQ10LT,135 is an N-channel metal oxide semiconductor field effect transistor (MOSFET) which belongs to the single transistor type family. It is used in a wide range of applications since it is commonly used to either switch or amplify electrical signals. This article will discuss the 135\'s application field and its working principle.
Application Fields
The PHT4NQ10LT,135 can be used in several applications due to its high level of performance and low on-resistance. It is often used as a switch in consumer electronic applications, such as remote controllers, DVB-S2 decoders, and consumer audio equipment. It is also well suited for medium-current applications, such as power supplies and motor control in industrial environments. In automotive applications, this MOSFET is used in electric power steering, as well as other current sensing applications.
The PHT4NQ10LT,135 is also suitable for use in general-purpose amplifier applications, due to its low capacitance and high switching speed. It can be used for amplifying audio signals, as well as amplifying any type of AC or DC signals in a variety of applications ranging from low-voltage to high-voltage signals.
Working Principle
The PHT4NQ10LT,135 is an N-channel MOSFET and its operation is based on the fundamentals of semiconductor physics. It is made up of a source, drain, and gate terminal, and when a gate voltage of positive polarity is applied, a depletion layer forms at the interface between the gate and the source, forming a barrier to current flow. This barrier is known as the “Threshold Voltage” and it is usually between 1 to 4 volts.
When the gate voltage of the PHT4NQ10LT,135 exceeds the threshold voltage, the barrier to current flow decreases allowing current to flow freely between the source and drain terminals. The amount of current (ID) flowing is proportional to the gate voltage (Vgs) according to the equation:
ID = K*(Vgs - Vth)2
The value of K is known as the “Transconductance” and it is related to the channel width of the MOSFET. The higher the channel width, the larger the Transconductance. The Transconductance is also affected by temperature as it decreases with higher temperatures.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| PHT4NQ10LT,135 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 100V 3.5A SC7... |
| PHT4NQ10T,135 | Nexperia USA... | 0.16 $ | 1000 | MOSFET N-CH 100V 3.5A SOT... |
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