PHT6NQ10T,135 Discrete Semiconductor Products |
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| Allicdata Part #: | 1727-5352-2-ND |
| Manufacturer Part#: |
PHT6NQ10T,135 |
| Price: | $ 0.21 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 100V 3A SOT223 |
| More Detail: | N-Channel 100V 3A (Ta) 1.8W (Ta), 8.3W (Tc) Surfac... |
| DataSheet: |  PHT6NQ10T,135 Datasheet/PDF |
| Quantity: | 1000 |
| 4000 +: | $ 0.18909 |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | TO-261-4, TO-261AA |
| Supplier Device Package: | SOT-223 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.8W (Ta), 8.3W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 633pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
| Series: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 90 mOhm @ 3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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A PHT6NQ10T,135 transistor is a type of field-effect transistor (FET), more specifically an enhancement mode, n-channel metal oxide silicon field-effect transistor (MOSFET). It has a compact package and is suitable for low voltage, high current applications. As a voltage-controlled device, it can be used to amplify signals and can also be used as a switch.
The working principle of a MOSFET transistor is based on the behavior of charge carriers in the presence of an electric field. In a MOSFET, when a voltage is applied to the drain and source, this creates an electric field which will attract electrons or holes to the gate region. This gate control reduces the gate-to-drain resistance, increasing the current flow from source to drain. Moreover, the gate voltage controls the current flow through the transistor. The higher the gate-to-source voltage is, the more current can flow through the transistor.
A PHT6NQ10T,135 MOSFET transistor can be used in numerous applications. It could be used in a simple switch to control a circuit from a low-voltage signal as a voltage control switch. It can also be used in logic circuits, as part of amplifiers. It can also be used as a power amplifier to control power supplies, as well as for current regulation and energy management. Another usage is in audio amplifiers, where it can be used to amplify sound signals.
In summary, the PHT6NQ10T,135 MOSFET transistor is a voltage-controlled device which is used in various applications. It utilizes an electric field to control the current flow through the transistor, which can be used to amplify or switch signals. As such, it is a very versatile component, and can be used in many devices.
The specific data is subject to PDF, and the above content is for reference
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