PHT6N06T,135 Discrete Semiconductor Products |
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Allicdata Part #: | 568-7368-2-ND |
Manufacturer Part#: |
PHT6N06T,135 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 55V 5.5A SOT223 |
More Detail: | N-Channel 55V 5.5A (Tc) 8.3W (Tc) Surface Mount SO... |
DataSheet: | PHT6N06T,135 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 8.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 175pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 5.6nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The PHT6N06T,135 is a single transistor in the field effect transistor (FET) family. In general, FETs are electronic components with three terminals, a source, a gate, and a drain. These transistors are active devices that can be used to amplify or switch electronic signals. They work on the principle of a variable resistor, where the resistance between the source and the drain changes when a voltage is applied to the gate.
FET transistors are used in a variety of applications due to their excellent qualities for transconductance and current handling capabilities, as well as their capable switching speeds and high levels of noise immunity. As such, FETs are a popular choice for applications ranging from power conversion to signal amplification and signal switching.
The PHT6N06T,135 is a specially designed FET transistor from NXP Semiconductors. This versatile device is designed to handle very high currents and has a maximum drain source voltage of 600 volts. It features low gate charge and low gate-drain charge, meaning it can be used in applications such as switch mode power supplies, H-bridge motor controls, audio amplifiers, and more.
The PHT6N06T,135 works on the principle of a field effect transistor. In simple terms, when a voltage is applied to the gate of the PHT6N06T,135, it creates an electric field at the surface of the channel between the source and the drain. This electric field controls the current flow between the source and the drain by creating a resistance. The higher the voltage applied to the gate, the greater the resistance and thus the lower the current flow. Conversely, the lower the voltage applied to the gate, the lower the resistance and thus the higher the current flow.
The PHT6N06T,135 is particularly useful when it comes to switch mode power supplies and H-bridge motor control applications. Its low gate charge and low gate-drain charge properties make it ideal for these types of uses, as it means that it requires lower gate voltages and can rapidly switch between different levels. This makes the device a great choice for applications where power, speed, and efficiency are of the utmost importance.
Overall, the PHT6N06T,135 is a versatile single transistor in the FET family. With features such as low gate charge and low gate-drain charge, it can be used in a variety of different applications, ranging from power conversion to signal switching and amplification. As such, the PHT6N06T,135 is a great choice for anyone looking for a reliable and efficient transistor that can handle high levels of current.
The specific data is subject to PDF, and the above content is for reference
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