PHT8N06LT,135 Discrete Semiconductor Products |
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Allicdata Part #: | 568-7369-2-ND |
Manufacturer Part#: |
PHT8N06LT,135 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 55V 3.5A SOT223 |
More Detail: | N-Channel 55V 3.5A (Ta) 1.8W (Ta), 8.3W (Tc) Surfa... |
DataSheet: | PHT8N06LT,135 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta), 8.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 25V |
Vgs (Max): | ±13V |
Gate Charge (Qg) (Max) @ Vgs: | 11.2nC @ 5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 5A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The PHT8N06LT,135 is a high-power MOSFET that is commonly used in applications where considerable power needs to be sent to a load. The device has a drain-source voltage of 60V and a drain current of 13.5A, making it suitable for a variety of automotive, lighting and HVAC applications.The MOSFET is a voltage-controlled device and uses the principle of field-effect conduction to switch large currents. The MOSFET is operated in its saturation region, meaning that the current flows between the source and drain terminals, and only depends on the voltage between them. As input voltage is applied to the gate of the MOSFET, a channel is created and as the voltage increases, the channel is opened wider and more current flows.The PHT8N06LT,135 is an N-channel MOSFET, meaning the voltage at the gate controls the flow of electrons (or current) from the source port to the drain port. The channel forms, allowing the current to flow, when a voltage is applied to the gate of the MOSFET and the \'ON\' state is achieved. When the gate voltage is removed, the channel is closed to prevent any more current flow through. The PHT8N06LT,135 is an enhancement-mode MOSFET, meaning the current can only flow when there is an applied voltage on the gate.This MOSFET is used in a wide variety of applications, as it is capable of handling large currents and also has a low on-resistance of 86mΩ. It can be used as a switch in a variety of applications such as motor control, lighting and HVAC control, due to its ability to quickly turn on and off high currents. Its high power capabilities make it ideal for use in automotive or consumer electronics applications when a significant load needs to be switched.The PHT8N06LT,135 is ideal for use in applications where high current flows and quick switching is required, such as motor control and lighting. It can also be used in applications where a low on-resistance is required, as well as applications seeking high reliability. Thanks to its durability and high current ratings, it is an ideal option for a variety of automotive and consumer electronics applications.In conclusion, the PHT8N06LT,135 is an N-channel MOSFET that is capable of handling very high currents and features a low on-resistance. It is suitable for a wide range of applications, including motor control, lighting, HVAC control and consumer electronics. It is a reliable, high-power device that is designed to safely switch large currents quickly and reliably.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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PHT8N06LT,135 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 55V 3.5A SOT2... |
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