PMBT3906MB,315

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 1V
Power - Max:	250mW
Frequency - Transition:	250MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-XFDFN
Supplier Device Package:	3-DFN1006B (0.6x1)
Base Part Number:	PMBT3906

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PMBT3906MB,315 Application Field and Working PrincipleThe PMBT3906MB,315 is a PNP Bipolar Junction Transistor (BJT) from the Single Transistor family. It is designed for general purpose amplification and switching applications. With 209mA of collector current, a voltage gain of 64, and a collector-emitter saturation voltage of 220mV, this device offers plenty of power for a variety of applications.A bipolar junction transistor (BJT) is an active semiconductor device that has three terminals: base, collector, and emitter. In a BJT, current flows from the collector to the emitter when a voltage is applied to the base terminal. The amount of current is determined by the amount of current flowing between the collector and the emitter. The PMBT3906MB,315 is a NPN bipolar device that has a maximum collector current of 209mA and a maximum collector-emitter saturation voltage of 220mV. It is a general purpose transistor and can be used in multiple applications including amplifier circuits, switching circuits, and more. The PMBT3906MB,315 is well suited for a wide array of applications due to its low saturation voltage and its high current capability. The PMBT3906MB,315 is a general purpose NPN BJT. It has a voltage gain of 64 and its maximum collector current can reach up to 209mA. Its maximum collector-emitter saturation voltage is 220mV, allowing it to fulfill switching circuit requirements. The PMBT3906MB,315 is ideal for many applications including audio circuits, amplifier circuits, and more. When it comes to the working principle, the PMBT3906MB,315 follows the same working principle of most bipolar junction transistors. It has a base, collector, and emitter, and current flows in between the collector and the emitter when a voltage is applied to the base terminal. The amount of current is determined by the amount of current that is flowing between the collector and emitter, and the amount of current will be controlled by the voltage applied to the base terminal. In addition, the PMBT3906MB,315 follows a few other working principles. Firstly, the device has an amplification factor that is determined by the current flowing between the collector and emitter and the amount of current passing through the base region. This is commonly referred to as the voltage gain and is typically denoted with an "h" symbol. Secondly, the device has a collector-emitter saturation voltage of 220mV, which enables the device to fulfill switching requirements. Overall, the PMBT3906MB,315 is a very useful NPN Bipolar Junction Transistor (BJT) from the Single Transistor family. It can be used for various applications and is highly suitable for amplifier circuits, switching circuits, and more due to its low saturation voltage and its high current capability. It is also a general-purpose transistor and follows the same working principles as other bipolar junction transistors. In conclusion, the PMBT3906MB,315 is an ideal choice for general purpose amplification and switching applications. It has a voltage gain of 64, a maximum collector current of 209mA, and a maximum collector-emitter saturation voltage of 220mV. It is also well suited for a wide array of applications due to its low saturation voltage and its high current capability.

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